Epitaxial growth of Fe3Si/GaAs(0 0 1) hybrid structures for spintronic application

J. Herfort, H. P. Schönherr, A. Kawaharazuka, M. Ramsteiner, K. H. Ploog

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24 Citations (Scopus)

Abstract

Fe3Si/GaAs(0 0 1) hybrid structures of high crystal and interfacial perfection are fabricated by molecular beam epitaxy at 200°C. The composition of the films can be tuned over a wide range of Si content. The Fe3Si/GaAs(0 0 1) films are robust against thermal annealing up to 425°C. Room-temperature spin injection is demonstrated from the ferromagnetic metal Fe3Si into the semiconductor GaAs by analyzing the circular polarization of the electroluminescence intensity emitted by an n-i-p light-emitting diode.

Original languageEnglish
Pages (from-to)666-670
Number of pages5
JournalJournal of Crystal Growth
Volume278
Issue number1-4
DOIs
Publication statusPublished - 2005 May 1

Keywords

  • A1. Spin injection
  • A3. Molecular beam epitaxy
  • B2. Ferromagnet/semiconductor hybrid structures

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Herfort, J., Schönherr, H. P., Kawaharazuka, A., Ramsteiner, M., & Ploog, K. H. (2005). Epitaxial growth of Fe3Si/GaAs(0 0 1) hybrid structures for spintronic application. Journal of Crystal Growth, 278(1-4), 666-670. https://doi.org/10.1016/j.jcrysgro.2004.12.124