Fe3Si/GaAs(0 0 1) hybrid structures of high crystal and interfacial perfection are fabricated by molecular beam epitaxy at 200°C. The composition of the films can be tuned over a wide range of Si content. The Fe3Si/GaAs(0 0 1) films are robust against thermal annealing up to 425°C. Room-temperature spin injection is demonstrated from the ferromagnetic metal Fe3Si into the semiconductor GaAs by analyzing the circular polarization of the electroluminescence intensity emitted by an n-i-p light-emitting diode.
- A1. Spin injection
- A3. Molecular beam epitaxy
- B2. Ferromagnet/semiconductor hybrid structures
ASJC Scopus subject areas
- Condensed Matter Physics