Epitaxial growth of high-quality Mg x Zn 1-xO films by a plasma-assisted reactive evaporation method using ZnMg alloys as a source material

T. Abe, A. Nakagawa, M. Tanaka, M. Nakagawa, H. Endo, K. Meguro, Y. Kashiwaba, S. Chiba, T. Ojima, K. Aota, S. Takahashi, M. Daibo, H. Osada, T. Fujiwara, Katsunori Yamaguchi, I. Niikura, Y. Kashiwaba

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Epitaxial growth of high-quality Mg x Zn 1-xO films on Zn faces of single crystal ZnO substrates was achieved by a plasma-assisted reactive evaporation method using ZnMg alloys. The composition of Mg of Mg x Zn 1-xO films grown by using this method strongly depended on the composition of Mg of ZnMg alloys. Mg composition of Mg x Zn 1-xO films increased with increase in the composition of Mg of ZnMg alloys with 7.5-30 wt%. The maximum value of (x) of the Mg x Zn 1-xO films was 0.24. The peak position of XRD from Mg x Zn 1-xO (0002) of a wurtzite structure shifted to a high angle with increase of Mg composition of Mg x Zn 1-xO films. The full-width at half-maximum value of the XRD pattern of ω scans of Mg 0.17Zn0 0.83O (0002) was 40 arcsec. The root mean square roughness of the surface of Mg x Zn 1-xO films was 1.0 nm or less, and flat terraces and steps with a height of two monolayers were observed. Room temperature photoluminescence spectra of Mg x Zn 1-xO films showed a strong near band-edge (NBE) emission and very weak emission in visible regions. The peak of NBE emissions of Mg x Zn 1-xO films shifted to higher energy with increase of Mg composition of Mg x Zn 1-x O films. The band-gap energy estimated from reflectance spectra increased from 3.38 to 3.83 eV with increase of composition (x) of Mg x Zn 1-xO films from 0.01 to 0.24. This new growth method is useful for preparation of devices based on ZnO and its related compounds.

Original languageEnglish
Pages (from-to)1813-1816
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number8-9
DOIs
Publication statusPublished - 2012 Aug
Externally publishedYes

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evaporation
wurtzite
roughness
reflectance
photoluminescence
preparation
single crystals
room temperature

Keywords

  • MgZnO
  • Plasma-assist
  • ZnMg alloy
  • ZnO

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Epitaxial growth of high-quality Mg x Zn 1-xO films by a plasma-assisted reactive evaporation method using ZnMg alloys as a source material. / Abe, T.; Nakagawa, A.; Tanaka, M.; Nakagawa, M.; Endo, H.; Meguro, K.; Kashiwaba, Y.; Chiba, S.; Ojima, T.; Aota, K.; Takahashi, S.; Daibo, M.; Osada, H.; Fujiwara, T.; Yamaguchi, Katsunori; Niikura, I.; Kashiwaba, Y.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 8-9, 08.2012, p. 1813-1816.

Research output: Contribution to journalArticle

Abe, T, Nakagawa, A, Tanaka, M, Nakagawa, M, Endo, H, Meguro, K, Kashiwaba, Y, Chiba, S, Ojima, T, Aota, K, Takahashi, S, Daibo, M, Osada, H, Fujiwara, T, Yamaguchi, K, Niikura, I & Kashiwaba, Y 2012, 'Epitaxial growth of high-quality Mg x Zn 1-xO films by a plasma-assisted reactive evaporation method using ZnMg alloys as a source material', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 9, no. 8-9, pp. 1813-1816. https://doi.org/10.1002/pssc.201100565
Abe, T. ; Nakagawa, A. ; Tanaka, M. ; Nakagawa, M. ; Endo, H. ; Meguro, K. ; Kashiwaba, Y. ; Chiba, S. ; Ojima, T. ; Aota, K. ; Takahashi, S. ; Daibo, M. ; Osada, H. ; Fujiwara, T. ; Yamaguchi, Katsunori ; Niikura, I. ; Kashiwaba, Y. / Epitaxial growth of high-quality Mg x Zn 1-xO films by a plasma-assisted reactive evaporation method using ZnMg alloys as a source material. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2012 ; Vol. 9, No. 8-9. pp. 1813-1816.
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abstract = "Epitaxial growth of high-quality Mg x Zn 1-xO films on Zn faces of single crystal ZnO substrates was achieved by a plasma-assisted reactive evaporation method using ZnMg alloys. The composition of Mg of Mg x Zn 1-xO films grown by using this method strongly depended on the composition of Mg of ZnMg alloys. Mg composition of Mg x Zn 1-xO films increased with increase in the composition of Mg of ZnMg alloys with 7.5-30 wt{\%}. The maximum value of (x) of the Mg x Zn 1-xO films was 0.24. The peak position of XRD from Mg x Zn 1-xO (0002) of a wurtzite structure shifted to a high angle with increase of Mg composition of Mg x Zn 1-xO films. The full-width at half-maximum value of the XRD pattern of ω scans of Mg 0.17Zn0 0.83O (0002) was 40 arcsec. The root mean square roughness of the surface of Mg x Zn 1-xO films was 1.0 nm or less, and flat terraces and steps with a height of two monolayers were observed. Room temperature photoluminescence spectra of Mg x Zn 1-xO films showed a strong near band-edge (NBE) emission and very weak emission in visible regions. The peak of NBE emissions of Mg x Zn 1-xO films shifted to higher energy with increase of Mg composition of Mg x Zn 1-x O films. The band-gap energy estimated from reflectance spectra increased from 3.38 to 3.83 eV with increase of composition (x) of Mg x Zn 1-xO films from 0.01 to 0.24. This new growth method is useful for preparation of devices based on ZnO and its related compounds.",
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AU - Meguro, K.

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AU - Aota, K.

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AU - Daibo, M.

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