Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

Naoki Mino, Masakazu Kobayashi, Makoto Konagai, Kiyoshi Takahashi

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

ZnSe thin films were grown on (100) and (111) oriented Si substrates by molecular beam epitaxy. The single-crystalline ZnSe films were obtained in the substrate temperature range of 300-450°C. The epitaxial layers were evaluated by reflection high-energy electron diffraction, x-ray diffraction, etch pit density, photoluminescence, and Hall effect measurements. Etch pit density was estimated to be 3×105 cm-2. The carrier concentration and electron mobility of the epitaxial ZnSe layers at room temperature are 1.3×1017-2.8×10 17 cm-3 and 170-250 cm2/V s, respectively. These epitaxial films were applied to Au/ZnSe:Mn/Si dc-operated electroluminescent cells. The maximum quantum efficiency of 2.2×10-2 (30.4 V, 6.3×10- 5 A/cm2) was achieved.

Original languageEnglish
Pages (from-to)793-796
Number of pages4
JournalJournal of Applied Physics
Volume58
Issue number2
DOIs
Publication statusPublished - 1985
Externally publishedYes

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molecular beam epitaxy
cells
electron mobility
high energy electrons
Hall effect
quantum efficiency
x ray diffraction
electron diffraction
photoluminescence
room temperature
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells. / Mino, Naoki; Kobayashi, Masakazu; Konagai, Makoto; Takahashi, Kiyoshi.

In: Journal of Applied Physics, Vol. 58, No. 2, 1985, p. 793-796.

Research output: Contribution to journalArticle

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