TY - GEN
T1 - Epitaxial growth on lattice-mismatched substrate for high-performance lasers
AU - Nakao, Ryo
AU - Arai, Masakazu
AU - Kobayashi, Wataru
AU - Kakitsuka, Takaaki
AU - Yamamoto, Tsuyoshi
AU - Matsuo, Shinji
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/1
Y1 - 2016/8/1
N2 - Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of semiconductor devices caused by the lattice-matching restriction. We have demonstrated high-crystalline-quality metamorphic grown InGaAs and GaAs/Ge layers on GaAs and Si substrates, respectively. The InGaAs layer on GaAs allows us to make laser diodes operating at 25 Gbit/s with high characteristic temperature of 187 K at 1.3-μm wavelength. Moreover, III-V compound semiconductors on Si substrate are promising to for large-scale and low-cost fabrication. We have also achieved a high-crystalline-quality GaAs layer on Si substrate by using an MOVPE-grown Ge buffer layer.
AB - Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of semiconductor devices caused by the lattice-matching restriction. We have demonstrated high-crystalline-quality metamorphic grown InGaAs and GaAs/Ge layers on GaAs and Si substrates, respectively. The InGaAs layer on GaAs allows us to make laser diodes operating at 25 Gbit/s with high characteristic temperature of 187 K at 1.3-μm wavelength. Moreover, III-V compound semiconductors on Si substrate are promising to for large-scale and low-cost fabrication. We have also achieved a high-crystalline-quality GaAs layer on Si substrate by using an MOVPE-grown Ge buffer layer.
KW - epitaxial growth
KW - heteroepitaxial
KW - metamorphic growth
KW - semiconductor laser
UR - http://www.scopus.com/inward/record.url?scp=84992109113&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84992109113&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2016.7528533
DO - 10.1109/ICIPRM.2016.7528533
M3 - Conference contribution
AN - SCOPUS:84992109113
T3 - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
BT - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Compound Semiconductor Week, CSW 2016
Y2 - 26 June 2016 through 30 June 2016
ER -