Epitaxial growth on lattice-mismatched substrate for high-performance lasers

Ryo Nakao, Masakazu Arai, Wataru Kobayashi, Takaaki Kakitsuka, Tsuyoshi Yamamoto, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of semiconductor devices caused by the lattice-matching restriction. We have demonstrated high-crystalline-quality metamorphic grown InGaAs and GaAs/Ge layers on GaAs and Si substrates, respectively. The InGaAs layer on GaAs allows us to make laser diodes operating at 25 Gbit/s with high characteristic temperature of 187 K at 1.3-μm wavelength. Moreover, III-V compound semiconductors on Si substrate are promising to for large-scale and low-cost fabrication. We have also achieved a high-crystalline-quality GaAs layer on Si substrate by using an MOVPE-grown Ge buffer layer.

Original languageEnglish
Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509019649
DOIs
Publication statusPublished - 2016 Aug 1
Externally publishedYes
Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
Duration: 2016 Jun 262016 Jun 30

Publication series

Name2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period16/6/2616/6/30

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Keywords

  • epitaxial growth
  • heteroepitaxial
  • metamorphic growth
  • semiconductor laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Nakao, R., Arai, M., Kobayashi, W., Kakitsuka, T., Yamamoto, T., & Matsuo, S. (2016). Epitaxial growth on lattice-mismatched substrate for high-performance lasers. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528533] (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528533