Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

    Original languageEnglish
    Pages (from-to)4742-4746
    Number of pages5
    JournalJournal of Electronic Materials
    Volume45
    Issue number10
    DOIs
    Publication statusPublished - 2016 Oct 1

    Fingerprint

    zinc tellurides
    Aluminum Oxide
    Epilayers
    Sapphire
    Zinc
    sapphire
    Substrates
    Molecular beam epitaxy
    Poles
    x ray diffraction
    poles
    molecular beam epitaxy
    Physical properties
    Diffraction
    physical properties
    X rays

    Keywords

    • heteroepitaxy
    • Molecular beam epitaxy
    • pole figure
    • sapphire
    • x-ray diffraction
    • zinc telluride

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Sun, W. C., ... Asahi, T. (2016). Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates. Journal of Electronic Materials, 45(10), 4742-4746. https://doi.org/10.1007/s11664-016-4700-5

    Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates. / Nakasu, Taizo; Aiba, Takayuki; Yamashita, Sotaro; Hattori, Shota; Kizu, Takeru; Sun, Wei Che; Taguri, Kosuke; Kazami, Fukino; Hashimoto, Yuki; Ozaki, Shun; Kobayashi, Masakazu; Asahi, Toshiaki.

    In: Journal of Electronic Materials, Vol. 45, No. 10, 01.10.2016, p. 4742-4746.

    Research output: Contribution to journalArticle

    Nakasu, T, Aiba, T, Yamashita, S, Hattori, S, Kizu, T, Sun, WC, Taguri, K, Kazami, F, Hashimoto, Y, Ozaki, S, Kobayashi, M & Asahi, T 2016, 'Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates', Journal of Electronic Materials, vol. 45, no. 10, pp. 4742-4746. https://doi.org/10.1007/s11664-016-4700-5
    Nakasu, Taizo ; Aiba, Takayuki ; Yamashita, Sotaro ; Hattori, Shota ; Kizu, Takeru ; Sun, Wei Che ; Taguri, Kosuke ; Kazami, Fukino ; Hashimoto, Yuki ; Ozaki, Shun ; Kobayashi, Masakazu ; Asahi, Toshiaki. / Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates. In: Journal of Electronic Materials. 2016 ; Vol. 45, No. 10. pp. 4742-4746.
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    abstract = "Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.",
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    AU - Sun, Wei Che

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