Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Taizo Nakasu; Takayuki Aiba; Sotaro Yamashita; Shota Hattori; Takeru Kizu; Wei Che Sun; Kosuke Taguri; Fukino Kazami; Yuki Hashimoto; Shun Ozaki; Masakazu Kobayashi; Toshiaki Asahi

doi:10.1007/s11664-016-4700-5

Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Taizo Nakasu^*, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

Original language	English
Pages (from-to)	4742-4746
Number of pages	5
Journal	Journal of Electronic Materials
Volume	45
Issue number	10
DOIs	https://doi.org/10.1007/s11664-016-4700-5
Publication status	Published - 2016 Oct 1

Keywords

Molecular beam epitaxy
heteroepitaxy
pole figure
sapphire
x-ray diffraction
zinc telluride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-016-4700-5

Cite this

@article{860a4298309b4ca2b8c0d07849142790,

title = "Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates",

abstract = "Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.",

keywords = "Molecular beam epitaxy, heteroepitaxy, pole figure, sapphire, x-ray diffraction, zinc telluride",

author = "Taizo Nakasu and Takayuki Aiba and Sotaro Yamashita and Shota Hattori and Takeru Kizu and Sun, {Wei Che} and Kosuke Taguri and Fukino Kazami and Yuki Hashimoto and Shun Ozaki and Masakazu Kobayashi and Toshiaki Asahi",

note = "Funding Information: This work was supported in part by Waseda University Research Initiatives, “Early Bird” Grant for young researcher at Waseda Research Institute for Science and Engineering. The Research Grant from collaboration between Mitsubishi Materials Corporation and Faculty of Science and Engineering, Waseda University, and a Research Fellowship for Young Scientists from the Japan Society for the Promotion of Science (JSPS). One of the authors (T.N.) acknowledges the support of the Foundation of Ando Laboratory. Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

year = "2016",

month = oct,

day = "1",

doi = "10.1007/s11664-016-4700-5",

language = "English",

volume = "45",

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journal = "Journal of Electronic Materials",

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T1 - Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

AU - Nakasu, Taizo

AU - Aiba, Takayuki

AU - Yamashita, Sotaro

AU - Hattori, Shota

AU - Kizu, Takeru

AU - Sun, Wei Che

AU - Taguri, Kosuke

AU - Kazami, Fukino

AU - Hashimoto, Yuki

AU - Ozaki, Shun

AU - Kobayashi, Masakazu

AU - Asahi, Toshiaki

N1 - Funding Information: This work was supported in part by Waseda University Research Initiatives, “Early Bird” Grant for young researcher at Waseda Research Institute for Science and Engineering. The Research Grant from collaboration between Mitsubishi Materials Corporation and Faculty of Science and Engineering, Waseda University, and a Research Fellowship for Young Scientists from the Japan Society for the Promotion of Science (JSPS). One of the authors (T.N.) acknowledges the support of the Foundation of Ando Laboratory. Publisher Copyright: © 2016, The Minerals, Metals & Materials Society.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

AB - Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

KW - Molecular beam epitaxy

KW - heteroepitaxy

KW - pole figure

KW - sapphire

KW - x-ray diffraction

KW - zinc telluride

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DO - 10.1007/s11664-016-4700-5

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SN - 0361-5235

VL - 45

SP - 4742

EP - 4746

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Abstract

Keywords

ASJC Scopus subject areas

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