Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Taizo Nakasu*, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ¯ 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (10 1 ¯ 0) substrates, and r-plane (1 1 ¯ 02). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

Original languageEnglish
Pages (from-to)4742-4746
Number of pages5
JournalJournal of Electronic Materials
Issue number10
Publication statusPublished - 2016 Oct 1


  • Molecular beam epitaxy
  • heteroepitaxy
  • pole figure
  • sapphire
  • x-ray diffraction
  • zinc telluride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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