Epitaxial strain and antiferromagnetism in Heusler Fe2VSi thin films

N. Fukatani; K. Ueda; H. Asano

doi:10.1063/1.3555089

Epitaxial strain and antiferromagnetism in Heusler Fe₂VSi thin films

N. Fukatani^*, K. Ueda, H. Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The effects of biaxial strain on the electrical and magnetic properties of an antiferromagnetic Heusler compound Fe₂VSi were systematically investigated. A series of epitaxial Fe₂VSi thin films on MgAl ₂O₄ and MgO substrates were fabricated with different tensile strains by varying the substrate-lattice mismatch and the film thickness. The strain was characterized by the ratio of the out-of-plane lattice parameter c to the in-plane lattice parameter a; this ratio c/a varied from 0.987 to 0.998 at room temperature. The tensile epitaxial strain was found to increase the antiferromagnetic Neel temperature T_N to 193 K, which is 70 K higher than that for the unstrained bulk material. A clear dependence of T_N on c/a was observed, which is consistent with theoretical predictions in which the band Jahn-Teller effect plays a significant role.

Original language	English
Article number	073911
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3555089
Publication status	Published - 2011 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Epitaxial strain and antiferromagnetism in Heusler Fe2VSi thin films",

abstract = "The effects of biaxial strain on the electrical and magnetic properties of an antiferromagnetic Heusler compound Fe2VSi were systematically investigated. A series of epitaxial Fe2VSi thin films on MgAl 2O4 and MgO substrates were fabricated with different tensile strains by varying the substrate-lattice mismatch and the film thickness. The strain was characterized by the ratio of the out-of-plane lattice parameter c to the in-plane lattice parameter a; this ratio c/a varied from 0.987 to 0.998 at room temperature. The tensile epitaxial strain was found to increase the antiferromagnetic Neel temperature TN to 193 K, which is 70 K higher than that for the unstrained bulk material. A clear dependence of TN on c/a was observed, which is consistent with theoretical predictions in which the band Jahn-Teller effect plays a significant role.",

author = "N. Fukatani and K. Ueda and H. Asano",

note = "Funding Information: The authors would like to thank S. Ishida and S. Fujii of Kagoshima University for their valuable discussion. This work is partly supported by the Grants-in-aid Scientific Research (No. 20360005) from the Ministry of Education, Culture, Sports, Science and Technology.",

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T1 - Epitaxial strain and antiferromagnetism in Heusler Fe2VSi thin films

AU - Fukatani, N.

AU - Ueda, K.

AU - Asano, H.

N1 - Funding Information: The authors would like to thank S. Ishida and S. Fujii of Kagoshima University for their valuable discussion. This work is partly supported by the Grants-in-aid Scientific Research (No. 20360005) from the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - The effects of biaxial strain on the electrical and magnetic properties of an antiferromagnetic Heusler compound Fe2VSi were systematically investigated. A series of epitaxial Fe2VSi thin films on MgAl 2O4 and MgO substrates were fabricated with different tensile strains by varying the substrate-lattice mismatch and the film thickness. The strain was characterized by the ratio of the out-of-plane lattice parameter c to the in-plane lattice parameter a; this ratio c/a varied from 0.987 to 0.998 at room temperature. The tensile epitaxial strain was found to increase the antiferromagnetic Neel temperature TN to 193 K, which is 70 K higher than that for the unstrained bulk material. A clear dependence of TN on c/a was observed, which is consistent with theoretical predictions in which the band Jahn-Teller effect plays a significant role.

AB - The effects of biaxial strain on the electrical and magnetic properties of an antiferromagnetic Heusler compound Fe2VSi were systematically investigated. A series of epitaxial Fe2VSi thin films on MgAl 2O4 and MgO substrates were fabricated with different tensile strains by varying the substrate-lattice mismatch and the film thickness. The strain was characterized by the ratio of the out-of-plane lattice parameter c to the in-plane lattice parameter a; this ratio c/a varied from 0.987 to 0.998 at room temperature. The tensile epitaxial strain was found to increase the antiferromagnetic Neel temperature TN to 193 K, which is 70 K higher than that for the unstrained bulk material. A clear dependence of TN on c/a was observed, which is consistent with theoretical predictions in which the band Jahn-Teller effect plays a significant role.

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DO - 10.1063/1.3555089

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ER -

Epitaxial strain and antiferromagnetism in Heusler Fe₂VSi thin films

Abstract

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