Epitaxial technology of Si/CoSi 2/Si layers for solar cell application

Yoshiko Tsuji, Suguru Noda, Makoto Mizukami, Hiroshi Komiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

High quality Si/CoSi 2/Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi 2 is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi2 and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSi x.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages289-292
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

Other

Other29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period02/5/1902/5/24

Fingerprint

Solar cells
solar cells
Hydrofluoric acid
hydrofluoric acid
Magnetron sputtering
Heterojunctions
magnetron sputtering
Single crystals
Crystalline materials
Transmission electron microscopy
Fabrication
Thin films
Silicon
transmission electron microscopy
fabrication
single crystals
silicon
Substrates
thin films
Costs

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Tsuji, Y., Noda, S., Mizukami, M., & Komiyama, H. (2002). Epitaxial technology of Si/CoSi 2/Si layers for solar cell application In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 289-292)

Epitaxial technology of Si/CoSi 2/Si layers for solar cell application . / Tsuji, Yoshiko; Noda, Suguru; Mizukami, Makoto; Komiyama, Hiroshi.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. p. 289-292.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsuji, Y, Noda, S, Mizukami, M & Komiyama, H 2002, Epitaxial technology of Si/CoSi 2/Si layers for solar cell application in Conference Record of the IEEE Photovoltaic Specialists Conference. pp. 289-292, 29th IEEE Photovoltaic Specialists Conference, New Orleans, LA, United States, 02/5/19.
Tsuji Y, Noda S, Mizukami M, Komiyama H. Epitaxial technology of Si/CoSi 2/Si layers for solar cell application In Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. p. 289-292
Tsuji, Yoshiko ; Noda, Suguru ; Mizukami, Makoto ; Komiyama, Hiroshi. / Epitaxial technology of Si/CoSi 2/Si layers for solar cell application Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. pp. 289-292
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