Epitaxial technology of Si/CoSi2/Si layers for solar cell application

Yoshiko Tsuji, Suguru Noda, Makoto Mizukami, Hiroshi Komiyama

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

High quality Si/CoSi2/Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi2 is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi2 and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSix.

Original languageEnglish
Pages (from-to)289-292
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2002 Dec 1
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

    Fingerprint

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this