Epitaxial technology of Si/CoSi2/Si layers for solar cell application

Yoshiko Tsuji; Suguru Noda; Makoto Mizukami; Hiroshi Komiyama

Epitaxial technology of Si/CoSi₂/Si layers for solar cell application

Yoshiko Tsuji, Suguru Noda, Makoto Mizukami, Hiroshi Komiyama

Research output: Contribution to journal › Conference article › peer-review

Abstract

High quality Si/CoSi₂/Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi₂ is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi2 and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSi_x.

Original language	English
Pages (from-to)	289-292
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 2002 Dec 1
Externally published	Yes
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 2002 May 19 → 2002 May 24

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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abstract = "High quality Si/CoSi2/Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi2 is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi2 and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSix.",

author = "Yoshiko Tsuji and Suguru Noda and Makoto Mizukami and Hiroshi Komiyama",

year = "2002",

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journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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T1 - Epitaxial technology of Si/CoSi2/Si layers for solar cell application

AU - Tsuji, Yoshiko

AU - Noda, Suguru

AU - Mizukami, Makoto

AU - Komiyama, Hiroshi

PY - 2002/12/1

Y1 - 2002/12/1

N2 - High quality Si/CoSi2/Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi2 is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi2 and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSix.

AB - High quality Si/CoSi2/Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi2 is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi2 and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSix.

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EP - 292

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

SN - 0160-8371

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Epitaxial technology of Si/CoSi2/Si layers for solar cell application

Abstract

ASJC Scopus subject areas

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Epitaxial technology of Si/CoSi₂/Si layers for solar cell application