Abstract
High quality Si/CoSi2/Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi2 is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi2 and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSix.
| Original language | English |
|---|---|
| Pages (from-to) | 289-292 |
| Number of pages | 4 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publication status | Published - 2002 Dec 1 |
| Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 2002 May 19 → 2002 May 24 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
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Cite this
Tsuji, Y., Noda, S., Mizukami, M., & Komiyama, H. (2002). Epitaxial technology of Si/CoSi2/Si layers for solar cell application. Conference Record of the IEEE Photovoltaic Specialists Conference, 289-292.