Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura

Research output: Contribution to journalComment/debate

3 Citations (Scopus)
Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume78
Issue number5
DOIs
Publication statusPublished - 2001 Jan 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Torii, K., Deguchi, T., Sota, T., & Nakamura, S. (2001). Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). Applied Physics Letters, 78(5). https://doi.org/10.1063/1.1343504