Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Torii; T. Deguchi; T. Sota; S. Nakamura

doi:10.1063/1.1343504

Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura

School of Advanced Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

3 Citations (Scopus)

Original language	English
Pages (from-to)	679
Number of pages	1
Journal	Applied Physics Letters
Volume	78
Issue number	5
DOIs	https://doi.org/10.1063/1.1343504
Publication status	Published - 2001 Jan 29

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Torii, K., Deguchi, T., Sota, T., & Nakamura, S. (2001). Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). Applied Physics Letters, 78(5), 679. https://doi.org/10.1063/1.1343504

Erratum : Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). / Chichibu, S. F.; Wada, K.; Müllhäuser, J.; Brandt, O.; Ploog, K. H.; Mizutani, T.; Setoguchi, A.; Nakai, R.; Sugiyama, M.; Nakanishi, H.; Torii, K.; Deguchi, T.; Sota, T.; Nakamura, S.

In: Applied Physics Letters, Vol. 78, No. 5, 29.01.2001, p. 679.

Research output: Contribution to journal › Comment/debate › peer-review

Chichibu, SF, Wada, K, Müllhäuser, J, Brandt, O, Ploog, KH, Mizutani, T, Setoguchi, A, Nakai, R, Sugiyama, M, Nakanishi, H, Torii, K, Deguchi, T, Sota, T & Nakamura, S 2001, 'Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))', Applied Physics Letters, vol. 78, no. 5, pp. 679. https://doi.org/10.1063/1.1343504

Chichibu, S. F. ; Wada, K. ; Müllhäuser, J. ; Brandt, O. ; Ploog, K. H. ; Mizutani, T. ; Setoguchi, A. ; Nakai, R. ; Sugiyama, M. ; Nakanishi, H. ; Torii, K. ; Deguchi, T. ; Sota, T. ; Nakamura, S. / Erratum : Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). In: Applied Physics Letters. 2001 ; Vol. 78, No. 5. pp. 679.

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Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

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