Erratum: Oxidized Si terminated diamond and its MOSFET operation with SiO2gate insulator (Applied Physics Letters (2020) 116 (212103) DOI: 10.1063/1.5143982)

Wenxi Fei, Te Bi, Masayuki Iwataki, Shoichiro Imanishi, Hiroshi Kawarada

Research output: Contribution to journalComment/debate

Abstract

This article was originally published on 29May 2020 with an error in the equation on page 4. The equation is correct as it appears below. (Equation Presented) The online version of the article was corrected on 1 June 2020. AIP Publishing apologizes for this error.

Original languageEnglish
Article number269901
JournalApplied Physics Letters
Volume116
Issue number26
DOIs
Publication statusPublished - 2020 Jun 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Erratum: Oxidized Si terminated diamond and its MOSFET operation with SiO<sub>2</sub>gate insulator (Applied Physics Letters (2020) 116 (212103) DOI: 10.1063/1.5143982)'. Together they form a unique fingerprint.

Cite this