Erratum: Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (Applied Physics Letters (2014) 105 (193509))

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number049903
JournalApplied Physics Letters
Volume106
Issue number4
DOIs
Publication statusPublished - 2015 Jan 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this