Erratum: Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (Applied Physics Letters (2014) 105 (193509))

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto

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