Erratum to

'ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation' [Nucl. Instr. and Meth. B 106 (1995) 289]

Naoto Kobayashi, Masataka Hasegawa, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy/Si than in Si1-x/Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy/Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy/Si layers crystallised by SPEG have both compressive and tensile strains.

Original languageEnglish
Pages (from-to)403-407
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume114
Issue number3-4
DOIs
Publication statusPublished - 1996 Jul 1
Externally publishedYes

Fingerprint

Crystallization
Ion implantation
Ion beams
ion implantation
ion beams
crystallization
Epitaxial growth
solid phases
bombardment
Atoms
Tensile strain
Secondary ion mass spectrometry
Ion bombardment
Structural properties
profiles
secondary ion mass spectrometry
atoms
Ions
Crystalline materials
implantation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "Erratum to: 'ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation' [Nucl. Instr. and Meth. B 106 (1995) 289]",
abstract = "Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy/Si than in Si1-x/Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy/Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy/Si layers crystallised by SPEG have both compressive and tensile strains.",
author = "Naoto Kobayashi and Masataka Hasegawa and Nobuyuki Hayashi and Hisao Tanoue and Hajime Shibata and Yunosuke Makita",
year = "1996",
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T1 - Erratum to

T2 - 'ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation' [Nucl. Instr. and Meth. B 106 (1995) 289]

AU - Kobayashi, Naoto

AU - Hasegawa, Masataka

AU - Hayashi, Nobuyuki

AU - Tanoue, Hisao

AU - Shibata, Hajime

AU - Makita, Yunosuke

PY - 1996/7/1

Y1 - 1996/7/1

N2 - Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy/Si than in Si1-x/Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy/Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy/Si layers crystallised by SPEG have both compressive and tensile strains.

AB - Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy/Si than in Si1-x/Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy/Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy/Si layers crystallised by SPEG have both compressive and tensile strains.

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