Erratum to: 'ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation' [Nucl. Instr. and Meth. B 106 (1995) 289]

Naoto Kobayashi, Masataka Hasegawa, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita

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Abstract

Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy/Si than in Si1-x/Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy/Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy/Si layers crystallised by SPEG have both compressive and tensile strains.

Original languageEnglish
Pages (from-to)403-407
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume114
Issue number3-4
DOIs
Publication statusPublished - 1996 Jul 1
Externally publishedYes

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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