Erratum to: 'ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation' [Nucl. Instr. and Meth. B 106 (1995) 289]

Naoto Kobayashi, Masataka Hasegawa, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita

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