Abstract
We present a lateral-current-injection InP-based DFB laser consisting of a pn junction fabricated by using Zn thermal diffusion and Si ion implantation. An error-free direct modulation with a bit rate of 25 Gbit/s is achieved.
Original language | English |
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Publication status | Published - 2014 Jan 1 |
Externally published | Yes |
Event | 2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: 2014 Jun 8 → 2014 Jun 13 |
Other
Other | 2014 Conference on Lasers and Electro-Optics, CLEO 2014 |
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Country/Territory | United States |
City | San Jose |
Period | 14/6/8 → 14/6/13 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials