The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.
|Number of pages||4|
|Publication status||Published - 2002 Jan 1|
|Event||2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States|
Duration: 2002 Jun 2 → 2002 Jun 4
|Conference||2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium|
|Period||02/6/2 → 02/6/4|
ASJC Scopus subject areas