Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation

Yuhei Suzuki; Yuma Fujita; Khotimatul Fauziah; Takuto Nogita; Hiroya Ikeda; Takanobu Watanabe; Yoshinari Kamakura

doi:10.23919/SISPAD49475.2020.9241616

Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation

Yuhei Suzuki, Yuma Fujita, Khotimatul Fauziah, Takuto Nogita, Hiroya Ikeda, Takanobu Watanabe, Yoshinari Kamakura

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A phonon transport in Si wire structures were simulated based on a Monte Carlo method to clarify the influence of the wire geometry and the surface roughness on thermal conductivity and the phonon-drag component of Seebeck coefficient. The mean free path (MFP) spectrum was estimated by tracing the simulated phonons. The MFPs of 1 THz phonons which mainly contribute to Seebeck coefficient become shorter with a decrease of the wire width for rough surfaces. This agrees with experimental observation of Seebeck coefficient. The MFPs of 3 THz phonons which mainly contribute to thermal conductivity were influenced even by small-roughness surfaces.

Original language	English
Title of host publication	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15-18
Number of pages	4
ISBN (Electronic)	9784863487635
DOIs	https://doi.org/10.23919/SISPAD49475.2020.9241616
Publication status	Published - 2020 Sept 23
Event	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan Duration: 2020 Sept 3 → 2020 Oct 6

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2020-September

Conference

Conference	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
Country/Territory	Japan
City	Virtual, Kobe
Period	20/9/3 → 20/10/6

Keywords

Monte Carlo simulation
Phonon
Si

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.23919/SISPAD49475.2020.9241616

Cite this

Suzuki, Y., Fujita, Y., Fauziah, K., Nogita, T., Ikeda, H., Watanabe, T., & Kamakura, Y. (2020). Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation. In 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (pp. 15-18). [9241616] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2020-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD49475.2020.9241616

Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation. / Suzuki, Yuhei; Fujita, Yuma; Fauziah, Khotimatul et al.

2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 15-18 9241616 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2020-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suzuki, Y, Fujita, Y, Fauziah, K, Nogita, T, Ikeda, H, Watanabe, T & Kamakura, Y 2020, Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation. in 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020., 9241616, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2020-September, Institute of Electrical and Electronics Engineers Inc., pp. 15-18, 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020, Virtual, Kobe, Japan, 20/9/3. https://doi.org/10.23919/SISPAD49475.2020.9241616

Suzuki Y, Fujita Y, Fauziah K, Nogita T, Ikeda H, Watanabe T et al. Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation. In 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 15-18. 9241616. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.23919/SISPAD49475.2020.9241616

Suzuki, Yuhei ; Fujita, Yuma ; Fauziah, Khotimatul et al. / Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation. 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 15-18 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "A phonon transport in Si wire structures were simulated based on a Monte Carlo method to clarify the influence of the wire geometry and the surface roughness on thermal conductivity and the phonon-drag component of Seebeck coefficient. The mean free path (MFP) spectrum was estimated by tracing the simulated phonons. The MFPs of 1 THz phonons which mainly contribute to Seebeck coefficient become shorter with a decrease of the wire width for rough surfaces. This agrees with experimental observation of Seebeck coefficient. The MFPs of 3 THz phonons which mainly contribute to thermal conductivity were influenced even by small-roughness surfaces.",

keywords = "Monte Carlo simulation, Phonon, Si",

author = "Yuhei Suzuki and Yuma Fujita and Khotimatul Fauziah and Takuto Nogita and Hiroya Ikeda and Takanobu Watanabe and Yoshinari Kamakura",

note = "Funding Information: This work was supported by JST-CREST under Grant JPMJCR19Q5. Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.; 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 ; Conference date: 03-09-2020 Through 06-10-2020",

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AU - Suzuki, Yuhei

AU - Fujita, Yuma

AU - Fauziah, Khotimatul

AU - Nogita, Takuto

AU - Ikeda, Hiroya

AU - Watanabe, Takanobu

AU - Kamakura, Yoshinari

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N2 - A phonon transport in Si wire structures were simulated based on a Monte Carlo method to clarify the influence of the wire geometry and the surface roughness on thermal conductivity and the phonon-drag component of Seebeck coefficient. The mean free path (MFP) spectrum was estimated by tracing the simulated phonons. The MFPs of 1 THz phonons which mainly contribute to Seebeck coefficient become shorter with a decrease of the wire width for rough surfaces. This agrees with experimental observation of Seebeck coefficient. The MFPs of 3 THz phonons which mainly contribute to thermal conductivity were influenced even by small-roughness surfaces.

AB - A phonon transport in Si wire structures were simulated based on a Monte Carlo method to clarify the influence of the wire geometry and the surface roughness on thermal conductivity and the phonon-drag component of Seebeck coefficient. The mean free path (MFP) spectrum was estimated by tracing the simulated phonons. The MFPs of 1 THz phonons which mainly contribute to Seebeck coefficient become shorter with a decrease of the wire width for rough surfaces. This agrees with experimental observation of Seebeck coefficient. The MFPs of 3 THz phonons which mainly contribute to thermal conductivity were influenced even by small-roughness surfaces.

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Estimation of phonon mean free path in small-scaled Si wire by monte carlo simulation

Abstract

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Keywords

ASJC Scopus subject areas

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