Evaluation of anisotropic biaxial stress in Si1-xGex/Ge mesa-structure by oil-immersion raman spectroscopy

S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Si1-xGex is one of the prospective materials for the next-generation transistors due to its high carrier mobility, especially for high Ge concentration Si1-xGex. Inducing strain in the Si1-xGex leads to transistor performance improvement, however it is difficult to evaluate strain induced in the channel region because the strained Si1-xGex channel may be scaled down to nanosize and relaxed complicatedly. We adopted oil-immersion Raman spectroscopy to evaluate the stress in the Si1-xGex nanostructure. In this technique, the anisotropic biaxial stress state in the Si1-xGex nanostructure can be evaluated. As a result, the nanostructure size dependence of the biaxial stress states in the Si1-xGex mesa structure on the Ge substrates was obtained, which was confirmed for the Si1-xGex with 76, 85, 92% Ge concentrations.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
EditorsF. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. DeGendt
PublisherElectrochemical Society Inc.
Pages39-45
Number of pages7
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
Externally publishedYes
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number4
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
CountryUnited States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • Engineering(all)

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    Yamamoto, S., Takeuchi, K., Yokogawa, R., Tomita, M., Kosemura, D., Usuda, K., & Ogura, A. (2015). Evaluation of anisotropic biaxial stress in Si1-xGex/Ge mesa-structure by oil-immersion raman spectroscopy. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. DeGendt (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 (4 ed., pp. 39-45). (ECS Transactions; Vol. 66, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/06604.0039ecst