Abstract
We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.
| Original language | English |
|---|---|
| Pages (from-to) | 841-847 |
| Number of pages | 7 |
| Journal | ECS Transactions |
| Volume | 64 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
| Externally published | Yes |
| Event | 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014 Oct 5 → 2014 Oct 9 |
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- Engineering(all)
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Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy. / Yamamoto, S.; Kosemura, D.; Tomita, Motohiro; Che Mohd Yusoff, S.; Kijima, T.; Imai, R.; Takeuchi, K.; Yokogawa, R.; Usuda, K.; Ogura, A.
In: ECS Transactions, Vol. 64, No. 6, 01.01.2014, p. 841-847.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy
AU - Yamamoto, S.
AU - Kosemura, D.
AU - Tomita, Motohiro
AU - Che Mohd Yusoff, S.
AU - Kijima, T.
AU - Imai, R.
AU - Takeuchi, K.
AU - Yokogawa, R.
AU - Usuda, K.
AU - Ogura, A.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.
AB - We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.
UR - http://www.scopus.com/inward/record.url?scp=84921261228&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84921261228&partnerID=8YFLogxK
U2 - 10.1149/06406.0841ecst
DO - 10.1149/06406.0841ecst
M3 - Conference article
AN - SCOPUS:84921261228
VL - 64
SP - 841
EP - 847
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 6
ER -