Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

S. Yamamoto; D. Kosemura; M. Tomita; S. Che Mohd Yusoff; T. Kijima; R. Imai; K. Takeuchi; R. Yokogawa; K. Usuda; A. Ogura

doi:10.1149/06406.0841ecst

Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

S. Yamamoto, D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, A. Ogura

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

Original language	English
Pages (from-to)	841-847
Number of pages	7
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0841ecst
Publication status	Published - 2014
Externally published	Yes
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014 Oct 5 → 2014 Oct 9

ASJC Scopus subject areas

Engineering(all)

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10.1149/06406.0841ecst

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Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy. / Yamamoto, S.; Kosemura, D.; Tomita, M.; Che Mohd Yusoff, S.; Kijima, T.; Imai, R.; Takeuchi, K.; Yokogawa, R.; Usuda, K.; Ogura, A.

In: ECS Transactions, Vol. 64, No. 6, 2014, p. 841-847.

Research output: Contribution to journal › Conference article › peer-review

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title = "Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy",

abstract = "We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.",

author = "S. Yamamoto and D. Kosemura and M. Tomita and {Che Mohd Yusoff}, S. and T. Kijima and R. Imai and K. Takeuchi and R. Yokogawa and K. Usuda and A. Ogura",

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doi = "10.1149/06406.0841ecst",

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T1 - Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

AU - Yamamoto, S.

AU - Kosemura, D.

AU - Tomita, M.

AU - Che Mohd Yusoff, S.

AU - Kijima, T.

AU - Imai, R.

AU - Takeuchi, K.

AU - Yokogawa, R.

AU - Usuda, K.

AU - Ogura, A.

PY - 2014

Y1 - 2014

N2 - We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

AB - We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

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DO - 10.1149/06406.0841ecst

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SP - 841

EP - 847

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 6

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

Abstract

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