Abstract
We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.
| Original language | English |
|---|---|
| Pages (from-to) | 841-847 |
| Number of pages | 7 |
| Journal | ECS Transactions |
| Volume | 64 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
| Externally published | Yes |
| Event | 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014 Oct 5 → 2014 Oct 9 |
ASJC Scopus subject areas
- Engineering(all)
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Yamamoto, S., Kosemura, D., Tomita, M., Che Mohd Yusoff, S., Kijima, T., Imai, R., Takeuchi, K., Yokogawa, R., Usuda, K., & Ogura, A. (2014). Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy. ECS Transactions, 64(6), 841-847. https://doi.org/10.1149/06406.0841ecst