Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

S. Yamamoto*, D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, A. Ogura

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

Original languageEnglish
Pages (from-to)841-847
Number of pages7
JournalECS Transactions
Volume64
Issue number6
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

ASJC Scopus subject areas

  • Engineering(all)

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