Abstract
We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.
Original language | English |
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Pages (from-to) | 841-847 |
Number of pages | 7 |
Journal | ECS Transactions |
Volume | 64 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2014 |
Externally published | Yes |
Event | 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014 Oct 5 → 2014 Oct 9 |
ASJC Scopus subject areas
- Engineering(all)