Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

S. Yamamoto; D. Kosemura; M. Tomita; S. Che Mohd Yusoff; T. Kijima; R. Imai; K. Takeuchi; R. Yokogawa; K. Usuda; A. Ogura

doi:10.1149/06406.0841ecst

Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

S. Yamamoto^*, D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, A. Ogura

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

Original language	English
Pages (from-to)	841-847
Number of pages	7
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0841ecst
Publication status	Published - 2014
Externally published	Yes
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2014 Oct 5 → 2014 Oct 9

ASJC Scopus subject areas

Engineering(all)

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10.1149/06406.0841ecst

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@article{6932c4e7b6dc45b4a87633a4f077d65d,

title = "Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy",

abstract = "We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.",

author = "S. Yamamoto and D. Kosemura and M. Tomita and {Che Mohd Yusoff}, S. and T. Kijima and R. Imai and K. Takeuchi and R. Yokogawa and K. Usuda and A. Ogura",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

doi = "10.1149/06406.0841ecst",

language = "English",

volume = "64",

pages = "841--847",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

AU - Yamamoto, S.

AU - Kosemura, D.

AU - Tomita, M.

AU - Che Mohd Yusoff, S.

AU - Kijima, T.

AU - Imai, R.

AU - Takeuchi, K.

AU - Yokogawa, R.

AU - Usuda, K.

AU - Ogura, A.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

AB - We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

UR - http://www.scopus.com/inward/record.url?scp=84921261228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84921261228&partnerID=8YFLogxK

U2 - 10.1149/06406.0841ecst

DO - 10.1149/06406.0841ecst

M3 - Conference article

AN - SCOPUS:84921261228

VL - 64

SP - 841

EP - 847

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 6

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

Abstract

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