Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy

S. Yamamoto, D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imai, K. Takeuchi, R. Yokogawa, K. Usuda, A. Ogura

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We applied surface-enhanced Raman spectroscopy (SERS) to the excitation of transversal optical (TO) phonos in strained SiGe. The SERS technique can greatly enhance the Raman signal owing to metal-surface plasmon resonance. Furthermore, the electrical field includes a large amount of z-polarization, which can excite TO phonons. In this study, we evaluated anisotropic biaxial stress state in thin strained-SiGe layer on a Si substrate with the SERS technique.

Original languageEnglish
Pages (from-to)841-847
Number of pages7
JournalECS Transactions
Volume64
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

ASJC Scopus subject areas

  • Engineering(all)

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    Yamamoto, S., Kosemura, D., Tomita, M., Che Mohd Yusoff, S., Kijima, T., Imai, R., Takeuchi, K., Yokogawa, R., Usuda, K., & Ogura, A. (2014). Evaluation of anisotropic biaxial stress in thin strained-SiGe layer using surface enhanced Raman spectroscopy. ECS Transactions, 64(6), 841-847. https://doi.org/10.1149/06406.0841ecst