Evaluation of anisotropic strain relaxation in strained silicon-on-insulator nanostructure by oil-immersion raman spectroscopy

Daisuke Kosemura, Motohiro Tomita, Koji Usuda, Atsushi Ogura

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Precise stress measurements have been desired in order to apply strained Si substrates to next-generation transistors. Oil-immersion Raman spectroscopy enables the evaluation of the anisotropic stress state in the strained Si layer of the strained Si substrate even under (001)-oriented Si backscattering geometry. First, we found that the phonon deformation potentials (PDPs) reported by Anastassakis et al. in 1990 was the most valid among the three sets of PDP previous reported. Using these PDPs, the precise Raman measurements of biaxial stress in strained Si-oninsulator (SSOI) nanostructures were performed. The biaxial stresses σxx and σyy decreased with the decrease in SSOI width and length, which was consistent with the finite element method calculation.

Original languageEnglish
Article number02BA03
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb 1
Externally publishedYes

Fingerprint

Strain relaxation
submerging
Raman spectroscopy
Nanostructures
oils
insulators
evaluation
silicon
stress measurement
Stress measurement
Substrates
Backscattering
backscattering
finite element method
Transistors
transistors
Finite element method
Geometry
geometry
Strained silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Evaluation of anisotropic strain relaxation in strained silicon-on-insulator nanostructure by oil-immersion raman spectroscopy. / Kosemura, Daisuke; Tomita, Motohiro; Usuda, Koji; Ogura, Atsushi.

In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BA03, 01.02.2012.

Research output: Contribution to journalArticle

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