Abstract
To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Editors | Jean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting |
| Publisher | Electrochemical Society Inc. |
| Pages | 87-93 |
| Number of pages | 7 |
| Volume | 86 |
| Edition | 7 |
| ISBN (Electronic) | 9781607685395 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
| Event | 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2018 Sep 30 → 2018 Oct 4 |
Other
| Other | 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting |
|---|---|
| Country | Mexico |
| City | Cancun |
| Period | 18/9/30 → 18/10/4 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. / Yokogawa, R.; Hashimoto, S.; Takahashi, K.; Oba, S.; Tomita, Motohiro; Kurosawa, M.; Watanabe, Takanobu; Ogura, A.
ECS Transactions. ed. / Jean-Michel Hartmann; Aaron Thean; Atsushi Ogura; Xiao Gong; David Harame; Matty Caymax; G. Niu; Andreas Schulze; Qizhi Liu; G. Mashi; Seiichi Miyazaki; Andreas Mai; Mikael Osting. Vol. 86 7. ed. Electrochemical Society Inc., 2018. p. 87-93.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth
AU - Yokogawa, R.
AU - Hashimoto, S.
AU - Takahashi, K.
AU - Oba, S.
AU - Tomita, Motohiro
AU - Kurosawa, M.
AU - Watanabe, Takanobu
AU - Ogura, A.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.
AB - To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.
UR - http://www.scopus.com/inward/record.url?scp=85058446340&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85058446340&partnerID=8YFLogxK
U2 - 10.1149/08607.0087ecst
DO - 10.1149/08607.0087ecst
M3 - Conference contribution
AN - SCOPUS:85058446340
VL - 86
SP - 87
EP - 93
BT - ECS Transactions
A2 - Hartmann, Jean-Michel
A2 - Thean, Aaron
A2 - Ogura, Atsushi
A2 - Gong, Xiao
A2 - Harame, David
A2 - Caymax, Matty
A2 - Niu, G.
A2 - Schulze, Andreas
A2 - Liu, Qizhi
A2 - Mashi, G.
A2 - Miyazaki, Seiichi
A2 - Mai, Andreas
A2 - Osting, Mikael
PB - Electrochemical Society Inc.
ER -