Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth

R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, Motohiro Tomita, M. Kurosawa, Takanobu Watanabe, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
PublisherElectrochemical Society Inc.
Pages87-93
Number of pages7
Volume86
Edition7
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
Event8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Other

Other8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

Fingerprint

Germanium
Melting
Wire
Silicon
Backscattering
Crystal orientation
Electrons
Seed
Raman spectroscopy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yokogawa, R., Hashimoto, S., Takahashi, K., Oba, S., Tomita, M., Kurosawa, M., ... Ogura, A. (2018). Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. In J-M. Hartmann, A. Thean, A. Ogura, X. Gong, D. Harame, M. Caymax, G. Niu, A. Schulze, Q. Liu, G. Mashi, S. Miyazaki, A. Mai, ... M. Osting (Eds.), ECS Transactions (7 ed., Vol. 86, pp. 87-93). Electrochemical Society Inc.. https://doi.org/10.1149/08607.0087ecst

Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. / Yokogawa, R.; Hashimoto, S.; Takahashi, K.; Oba, S.; Tomita, Motohiro; Kurosawa, M.; Watanabe, Takanobu; Ogura, A.

ECS Transactions. ed. / Jean-Michel Hartmann; Aaron Thean; Atsushi Ogura; Xiao Gong; David Harame; Matty Caymax; G. Niu; Andreas Schulze; Qizhi Liu; G. Mashi; Seiichi Miyazaki; Andreas Mai; Mikael Osting. Vol. 86 7. ed. Electrochemical Society Inc., 2018. p. 87-93.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yokogawa, R, Hashimoto, S, Takahashi, K, Oba, S, Tomita, M, Kurosawa, M, Watanabe, T & Ogura, A 2018, Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. in J-M Hartmann, A Thean, A Ogura, X Gong, D Harame, M Caymax, G Niu, A Schulze, Q Liu, G Mashi, S Miyazaki, A Mai & M Osting (eds), ECS Transactions. 7 edn, vol. 86, Electrochemical Society Inc., pp. 87-93, 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08607.0087ecst
Yokogawa R, Hashimoto S, Takahashi K, Oba S, Tomita M, Kurosawa M et al. Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. In Hartmann J-M, Thean A, Ogura A, Gong X, Harame D, Caymax M, Niu G, Schulze A, Liu Q, Mashi G, Miyazaki S, Mai A, Osting M, editors, ECS Transactions. 7 ed. Vol. 86. Electrochemical Society Inc. 2018. p. 87-93 https://doi.org/10.1149/08607.0087ecst
Yokogawa, R. ; Hashimoto, S. ; Takahashi, K. ; Oba, S. ; Tomita, Motohiro ; Kurosawa, M. ; Watanabe, Takanobu ; Ogura, A. / Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. ECS Transactions. editor / Jean-Michel Hartmann ; Aaron Thean ; Atsushi Ogura ; Xiao Gong ; David Harame ; Matty Caymax ; G. Niu ; Andreas Schulze ; Qizhi Liu ; G. Mashi ; Seiichi Miyazaki ; Andreas Mai ; Mikael Osting. Vol. 86 7. ed. Electrochemical Society Inc., 2018. pp. 87-93
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