TY - GEN
T1 - Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth
AU - Yokogawa, R.
AU - Hashimoto, S.
AU - Takahashi, K.
AU - Oba, S.
AU - Tomita, M.
AU - Kurosawa, M.
AU - Watanabe, T.
AU - Ogura, A.
N1 - Publisher Copyright:
© 2018 ECS Transactions. All rights reserved.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2018
Y1 - 2018
N2 - To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.
AB - To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.
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U2 - 10.1149/08607.0087ecst
DO - 10.1149/08607.0087ecst
M3 - Conference contribution
AN - SCOPUS:85058446340
SN - 9781510871670
T3 - ECS Transactions
SP - 87
EP - 93
BT - ECS Transactions
A2 - Liu, Qizhi
A2 - Hartmann, Jean-Michel
A2 - Thean, Aaron
A2 - Miyazaki, Seiichi
A2 - Ogura, Atsushi
A2 - Gong, Xiao
A2 - Caymax, Matty
A2 - Schulze, Andreas
A2 - Mashi, G.
A2 - Mai, Andreas
A2 - Osting, Mikael
A2 - Niu, G.
A2 - Harame, David
PB - Electrochemical Society Inc.
T2 - 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
Y2 - 30 September 2018 through 4 October 2018
ER -