Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth

R. Yokogawa; S. Hashimoto; K. Takahashi; S. Oba; Motohiro Tomita; M. Kurosawa; Takanobu Watanabe; A. Ogura

doi:10.1149/08607.0087ecst

Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth

R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, Motohiro Tomita, M. Kurosawa, Takanobu Watanabe, A. Ogura

Research Organization for Nano & Life Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.

Original language	English
Title of host publication	ECS Transactions
Editors	Jean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
Publisher	Electrochemical Society Inc.
Pages	87-93
Number of pages	7
Volume	86
Edition	7
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/08607.0087ecst
Publication status	Published - 2018 Jan 1
Event	8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2018 Sep 30 → 2018 Oct 4

Other

Other	8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
Country	Mexico
City	Cancun
Period	18/9/30 → 18/10/4

ASJC Scopus subject areas

Engineering(all)

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10.1149/08607.0087ecst

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Yokogawa, R., Hashimoto, S., Takahashi, K., Oba, S., Tomita, M., Kurosawa, M., Watanabe, T., & Ogura, A. (2018). Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. In J-M. Hartmann, A. Thean, A. Ogura, X. Gong, D. Harame, M. Caymax, G. Niu, A. Schulze, Q. Liu, G. Mashi, S. Miyazaki, A. Mai, & M. Osting (Eds.), ECS Transactions (7 ed., Vol. 86, pp. 87-93). Electrochemical Society Inc.. https://doi.org/10.1149/08607.0087ecst

Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. / Yokogawa, R.; Hashimoto, S.; Takahashi, K.; Oba, S.; Tomita, Motohiro; Kurosawa, M.; Watanabe, Takanobu; Ogura, A.

ECS Transactions. ed. / Jean-Michel Hartmann; Aaron Thean; Atsushi Ogura; Xiao Gong; David Harame; Matty Caymax; G. Niu; Andreas Schulze; Qizhi Liu; G. Mashi; Seiichi Miyazaki; Andreas Mai; Mikael Osting. Vol. 86 7. ed. Electrochemical Society Inc., 2018. p. 87-93.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yokogawa, R, Hashimoto, S, Takahashi, K, Oba, S, Tomita, M, Kurosawa, M, Watanabe, T & Ogura, A 2018, Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. in J-M Hartmann, A Thean, A Ogura, X Gong, D Harame, M Caymax, G Niu, A Schulze, Q Liu, G Mashi, S Miyazaki, A Mai & M Osting (eds), ECS Transactions. 7 edn, vol. 86, Electrochemical Society Inc., pp. 87-93, 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 18/9/30. https://doi.org/10.1149/08607.0087ecst

Yokogawa R, Hashimoto S, Takahashi K, Oba S, Tomita M, Kurosawa M et al. Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. In Hartmann J-M, Thean A, Ogura A, Gong X, Harame D, Caymax M, Niu G, Schulze A, Liu Q, Mashi G, Miyazaki S, Mai A, Osting M, editors, ECS Transactions. 7 ed. Vol. 86. Electrochemical Society Inc. 2018. p. 87-93 https://doi.org/10.1149/08607.0087ecst

Yokogawa, R. ; Hashimoto, S. ; Takahashi, K. ; Oba, S. ; Tomita, Motohiro ; Kurosawa, M. ; Watanabe, Takanobu ; Ogura, A. / Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth. ECS Transactions. editor / Jean-Michel Hartmann ; Aaron Thean ; Atsushi Ogura ; Xiao Gong ; David Harame ; Matty Caymax ; G. Niu ; Andreas Schulze ; Qizhi Liu ; G. Mashi ; Seiichi Miyazaki ; Andreas Mai ; Mikael Osting. Vol. 86 7. ed. Electrochemical Society Inc., 2018. pp. 87-93

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