Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth

R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.

Original languageEnglish
Title of host publicationECS Transactions
EditorsQizhi Liu, Jean-Michel Hartmann, Aaron Thean, Seiichi Miyazaki, Atsushi Ogura, Xiao Gong, Matty Caymax, Andreas Schulze, G. Mashi, Andreas Mai, Mikael Osting, G. Niu, David Harame
PublisherElectrochemical Society Inc.
Pages87-93
Number of pages7
Edition7
ISBN (Print)9781510871670
DOIs
Publication statusPublished - 2018
Event8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number7
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Evaluation of laterally graded silicon germanium wires for thermoelectric devices fabricated by rapid melting growth'. Together they form a unique fingerprint.

Cite this