Abstract
To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spectroscopy and electron backscattering pattern (EBSP). Ge fraction x and strain were estimated from one-dimensional distribution of Raman shift for Ge-Ge mode. As a result, an apparent change of Ge fraction x was observed. For biaxial isotropic strain assumption, good agreement among the obtained Ge fraction x distribution and theoretical values in the RMG laterally graded SiGe wire near Si seed area were shown. Crystal orientation mapping was obtained by EBSP. It was revealed that the crystal orientation in the SiGe wire was changed from [001] to [110] with increasing growth length. These changes may also influence electronic and thermoelectric performance dramatically.
Original language | English |
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Title of host publication | ECS Transactions |
Editors | Jean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting |
Publisher | Electrochemical Society Inc. |
Pages | 87-93 |
Number of pages | 7 |
Volume | 86 |
Edition | 7 |
ISBN (Electronic) | 9781607685395 |
DOIs | |
Publication status | Published - 2018 Jan 1 |
Event | 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 2018 Sep 30 → 2018 Oct 4 |
Other
Other | 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting |
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Country | Mexico |
City | Cancun |
Period | 18/9/30 → 18/10/4 |
ASJC Scopus subject areas
- Engineering(all)