Evaluation of microscopic structural randomness in SiO 2 by analysis of photoluminescence decay profiles

Keisuke Ishii, Kwang Soo Seol, Yoshimichi Ohki, Hiroyuki Nishikawa

    Research output: Contribution to journalArticle


    Microscopic structural randomness in SiO 2, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si-Si≡). As samples with different degrees of randomness, an ion-implanted thermal SiO 2 film, SiO 2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion-implanted oxygen), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness.

    Original languageEnglish
    Pages (from-to)1-5
    Number of pages5
    JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
    Issue number3
    Publication statusPublished - 1997



    • Decay profile
    • Oxygen vacancy
    • Photoluminescence
    • SiO
    • Stretched exponential function
    • Structural randomness

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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