Evaluation of organic monolayers formed on Si(111): Exploring the possibilities for application in electron beam nanoscale patterning

Taro Yamada, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue, Tetsuya Osaka

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17 Citations (Scopus)

Abstract

The methods of preparing organic monolayers on Si(111), the effects of electron-beam irradiation onto these monolayers, and the deposition of metal atoms over the irradiated areas have been investigated in order to develop a process of mass-scale production of nanometer-scale patterns on Si(111) wafer surfaces. The organic monolayers were fabricated on hydrogen-terminated Si(111) wafer surfaces using previously reported methods for the electrolysis of para-substituted benzenediazonium salts and the Grignard reaction with various alkyl moieties and reaction procedures. Using these electrolysis methods, partially well-defined two-dimensional monolayers were formed, which were, however, obscured by precipitated by-products. The Grignard reaction deposited homogeneous monolayer moieties of alkyl groups which were randomly arranged and are suitable for surface passivation. Electron-beam bombardment of the organic monolayers on Si(111) was performed in an atmosphere of O2 or H2O. The bombarded area was effectively oxidized in a well-controlled manner. By immersing the bombarded specimen into an aqueous NiSO4 + (NH4)2SO4 solution, Ni was selectively impregnated only within the area of electron bombardment. Based on these results, application of organic monolayers for fabricating nanometer-scale monolayer patterns is proposed.

Original languageEnglish
Pages (from-to)4845-4853
Number of pages9
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number8
Publication statusPublished - 2001 Aug 1

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Keywords

  • Diazonium electrolysis
  • Electron-beam patterning
  • Grignard reaction
  • Hydrogen-terminated Si(111)
  • Metal impregnation
  • Nanometer-scale fabrication
  • Organic monolayer

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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