Evaluation of outermost surface temperature of silicon substrates during UV-excited ozone oxidation at low temperature

Naoto Kameda, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Ken Nakamura, Tomoharu Ushiyama, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone gas was generated by UV irradiation of highly concentrated ozone gas. During the UV-excited ozone process, UV light irradiates the sample surface directly through the ozone gas. Then, the temperature at the sample surface is increased by UV-light absorption at the surface. Estimation of this surface temperature is important for understanding the oxidation mechanism. We estimated the surface temperature obtained during UV irradiation to be about 300oC by investigating the temperature dependence of the oxidation rate for oxygen gas. We have previously determined that almost no thermal decomposition of ozone gas occurs at this temperature, and that oxygen gas does not oxidize the Si substrate. Therefore, we concluded that the only oxidation species in the UV-excited ozone process is UV-excited ozone O(1D). 2010

Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalAnalytical Sciences
Volume26
Issue number2
DOIs
Publication statusPublished - 2010 Mar 30
Externally publishedYes

Fingerprint

Ozone
Silicon
Gases
Oxidation
Substrates
Temperature
Irradiation
Oxygen
Dielectric films
Gate dielectrics
Silicon wafers
Light absorption
Pyrolysis
Heating

ASJC Scopus subject areas

  • Analytical Chemistry

Cite this

Evaluation of outermost surface temperature of silicon substrates during UV-excited ozone oxidation at low temperature. / Kameda, Naoto; Nishiguchi, Tetsuya; Morikawa, Yoshiki; Kekura, Mitsuru; Nakamura, Ken; Ushiyama, Tomoharu; Nonaka, Hidehiko; Ichimura, Shingo.

In: Analytical Sciences, Vol. 26, No. 2, 30.03.2010, p. 273-276.

Research output: Contribution to journalArticle

Kameda, N, Nishiguchi, T, Morikawa, Y, Kekura, M, Nakamura, K, Ushiyama, T, Nonaka, H & Ichimura, S 2010, 'Evaluation of outermost surface temperature of silicon substrates during UV-excited ozone oxidation at low temperature', Analytical Sciences, vol. 26, no. 2, pp. 273-276. https://doi.org/10.2116/analsci.26.273
Kameda, Naoto ; Nishiguchi, Tetsuya ; Morikawa, Yoshiki ; Kekura, Mitsuru ; Nakamura, Ken ; Ushiyama, Tomoharu ; Nonaka, Hidehiko ; Ichimura, Shingo. / Evaluation of outermost surface temperature of silicon substrates during UV-excited ozone oxidation at low temperature. In: Analytical Sciences. 2010 ; Vol. 26, No. 2. pp. 273-276.
@article{ead2118041fe4e2dad750c3fbf80b6c2,
title = "Evaluation of outermost surface temperature of silicon substrates during UV-excited ozone oxidation at low temperature",
abstract = "Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone gas was generated by UV irradiation of highly concentrated ozone gas. During the UV-excited ozone process, UV light irradiates the sample surface directly through the ozone gas. Then, the temperature at the sample surface is increased by UV-light absorption at the surface. Estimation of this surface temperature is important for understanding the oxidation mechanism. We estimated the surface temperature obtained during UV irradiation to be about 300oC by investigating the temperature dependence of the oxidation rate for oxygen gas. We have previously determined that almost no thermal decomposition of ozone gas occurs at this temperature, and that oxygen gas does not oxidize the Si substrate. Therefore, we concluded that the only oxidation species in the UV-excited ozone process is UV-excited ozone O(1D). 2010",
author = "Naoto Kameda and Tetsuya Nishiguchi and Yoshiki Morikawa and Mitsuru Kekura and Ken Nakamura and Tomoharu Ushiyama and Hidehiko Nonaka and Shingo Ichimura",
year = "2010",
month = "3",
day = "30",
doi = "10.2116/analsci.26.273",
language = "English",
volume = "26",
pages = "273--276",
journal = "Analytical Sciences",
issn = "0910-6340",
publisher = "Japan Society for Analytical Chemistry",
number = "2",

}

TY - JOUR

T1 - Evaluation of outermost surface temperature of silicon substrates during UV-excited ozone oxidation at low temperature

AU - Kameda, Naoto

AU - Nishiguchi, Tetsuya

AU - Morikawa, Yoshiki

AU - Kekura, Mitsuru

AU - Nakamura, Ken

AU - Ushiyama, Tomoharu

AU - Nonaka, Hidehiko

AU - Ichimura, Shingo

PY - 2010/3/30

Y1 - 2010/3/30

N2 - Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone gas was generated by UV irradiation of highly concentrated ozone gas. During the UV-excited ozone process, UV light irradiates the sample surface directly through the ozone gas. Then, the temperature at the sample surface is increased by UV-light absorption at the surface. Estimation of this surface temperature is important for understanding the oxidation mechanism. We estimated the surface temperature obtained during UV irradiation to be about 300oC by investigating the temperature dependence of the oxidation rate for oxygen gas. We have previously determined that almost no thermal decomposition of ozone gas occurs at this temperature, and that oxygen gas does not oxidize the Si substrate. Therefore, we concluded that the only oxidation species in the UV-excited ozone process is UV-excited ozone O(1D). 2010

AB - Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone gas was generated by UV irradiation of highly concentrated ozone gas. During the UV-excited ozone process, UV light irradiates the sample surface directly through the ozone gas. Then, the temperature at the sample surface is increased by UV-light absorption at the surface. Estimation of this surface temperature is important for understanding the oxidation mechanism. We estimated the surface temperature obtained during UV irradiation to be about 300oC by investigating the temperature dependence of the oxidation rate for oxygen gas. We have previously determined that almost no thermal decomposition of ozone gas occurs at this temperature, and that oxygen gas does not oxidize the Si substrate. Therefore, we concluded that the only oxidation species in the UV-excited ozone process is UV-excited ozone O(1D). 2010

UR - http://www.scopus.com/inward/record.url?scp=77949877123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949877123&partnerID=8YFLogxK

U2 - 10.2116/analsci.26.273

DO - 10.2116/analsci.26.273

M3 - Article

VL - 26

SP - 273

EP - 276

JO - Analytical Sciences

JF - Analytical Sciences

SN - 0910-6340

IS - 2

ER -