Evaluation of resist sensitivity in extreme ultravioletsoft x-ray region for next-generation lithography

Tomoko Gowa Oyama, Akihiro Oshima, Masakazu Washio, Seiichi Tagawa

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    At and below the 11 nm node, shortening the exposure wavelength to 10 nm (extreme ultraviolet (EUV)soft x-ray region), especially at 6.6-6.8 nm, has been discussed as next-generation EUV lithography. In this study, dosesensitivities of typical resists were obtained at several wavelengths down to 3.1 nm and were found to depend on the wavelength. However, it was confirmed that the absorbed dose, calculated from the dosesensitivity and the respective linear absorption coefficient, was almost independent of the wavelength and constant for each resist. Thus, the resist sensitivity for next-generation lithography was predicted at wavelengths < 10 nm.

    Original languageEnglish
    Article number042153
    JournalAIP Advances
    Volume1
    Issue number4
    DOIs
    Publication statusPublished - 2011

    Fingerprint

    lithography
    evaluation
    wavelengths
    x rays
    absorptivity
    dosage

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Evaluation of resist sensitivity in extreme ultravioletsoft x-ray region for next-generation lithography. / Oyama, Tomoko Gowa; Oshima, Akihiro; Washio, Masakazu; Tagawa, Seiichi.

    In: AIP Advances, Vol. 1, No. 4, 042153, 2011.

    Research output: Contribution to journalArticle

    @article{835941359b2f49a6be53bc06b32482b1,
    title = "Evaluation of resist sensitivity in extreme ultravioletsoft x-ray region for next-generation lithography",
    abstract = "At and below the 11 nm node, shortening the exposure wavelength to 10 nm (extreme ultraviolet (EUV)soft x-ray region), especially at 6.6-6.8 nm, has been discussed as next-generation EUV lithography. In this study, dosesensitivities of typical resists were obtained at several wavelengths down to 3.1 nm and were found to depend on the wavelength. However, it was confirmed that the absorbed dose, calculated from the dosesensitivity and the respective linear absorption coefficient, was almost independent of the wavelength and constant for each resist. Thus, the resist sensitivity for next-generation lithography was predicted at wavelengths < 10 nm.",
    author = "Oyama, {Tomoko Gowa} and Akihiro Oshima and Masakazu Washio and Seiichi Tagawa",
    year = "2011",
    doi = "10.1063/1.3665672",
    language = "English",
    volume = "1",
    journal = "AIP Advances",
    issn = "2158-3226",
    publisher = "American Institute of Physics Publising LLC",
    number = "4",

    }

    TY - JOUR

    T1 - Evaluation of resist sensitivity in extreme ultravioletsoft x-ray region for next-generation lithography

    AU - Oyama, Tomoko Gowa

    AU - Oshima, Akihiro

    AU - Washio, Masakazu

    AU - Tagawa, Seiichi

    PY - 2011

    Y1 - 2011

    N2 - At and below the 11 nm node, shortening the exposure wavelength to 10 nm (extreme ultraviolet (EUV)soft x-ray region), especially at 6.6-6.8 nm, has been discussed as next-generation EUV lithography. In this study, dosesensitivities of typical resists were obtained at several wavelengths down to 3.1 nm and were found to depend on the wavelength. However, it was confirmed that the absorbed dose, calculated from the dosesensitivity and the respective linear absorption coefficient, was almost independent of the wavelength and constant for each resist. Thus, the resist sensitivity for next-generation lithography was predicted at wavelengths < 10 nm.

    AB - At and below the 11 nm node, shortening the exposure wavelength to 10 nm (extreme ultraviolet (EUV)soft x-ray region), especially at 6.6-6.8 nm, has been discussed as next-generation EUV lithography. In this study, dosesensitivities of typical resists were obtained at several wavelengths down to 3.1 nm and were found to depend on the wavelength. However, it was confirmed that the absorbed dose, calculated from the dosesensitivity and the respective linear absorption coefficient, was almost independent of the wavelength and constant for each resist. Thus, the resist sensitivity for next-generation lithography was predicted at wavelengths < 10 nm.

    UR - http://www.scopus.com/inward/record.url?scp=84855408787&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84855408787&partnerID=8YFLogxK

    U2 - 10.1063/1.3665672

    DO - 10.1063/1.3665672

    M3 - Article

    AN - SCOPUS:84855408787

    VL - 1

    JO - AIP Advances

    JF - AIP Advances

    SN - 2158-3226

    IS - 4

    M1 - 042153

    ER -