Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, X-ray, electron and ion induced reactions

Akihiro Oshima, Tomoko Gowa Oyama, Masakazu Washio, Seiichi Tagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The different exposure sources induce a different energy deposition in resist materials. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. The sensitivities of positive tone non-chemically (non-CA, ZEP) and chemically amplified (CA, UV-3) resist materials are evaluated using various ionized radiation such as EUV, soft X-rays, EB and various ion beams. Since the notations of sensitivity of resist vary with exposure sources, in order to evaluate systematically, the resist sensitivity were estimated in terms of absorbed dose in resist materials. Highly-monochromated EUV and soft X-rays (6.7 nm - 3.1 nm) from the BL27SU of the SPring-8, high energy ion beams (C6+, Ne10+, Mg 12+, Si14+, Ar18+, Kr36+ and Xe 54+) with 6 MeV/u from MEXP of HIMAC, EB from low energy EB accelerator (Hamamatsu Photonics, EB-engine®, 100 kV) and EB lithography system (30 keV and 75keV) were used for the exposure. For non-CA and CA resist materials, it was found that LET effects for sensitivity would be hardly observed except for heavier ion beams. Especially, in the case of the high energy ion beam less than Si14+ with 6 MeV/u, it is suggested that the radiation induced chemical reaction would be equivalent to EUV, soft X-ray and EB exposure. Hence, it indicates that the resist sensitivity could be systematically evaluated by absorbed dose in resist materials.

Original languageEnglish
Title of host publicationAdvances in Resist Materials and Processing Technology XXX
DOIs
Publication statusPublished - 2013 Jun 5
EventAdvances in Resist Materials and Processing Technology XXX - San Jose, CA, United States
Duration: 2013 Feb 252013 Feb 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8682
ISSN (Print)0277-786X

Conference

ConferenceAdvances in Resist Materials and Processing Technology XXX
CountryUnited States
CitySan Jose, CA
Period13/2/2513/2/27

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Keywords

  • Ionizing radiation
  • LET
  • Non-chemically and chemically amplitude resists
  • Positive-tone
  • Radiation chemistry
  • Resist sensitivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Oshima, A., Oyama, T. G., Washio, M., & Tagawa, S. (2013). Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, X-ray, electron and ion induced reactions. In Advances in Resist Materials and Processing Technology XXX [86821A] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8682). https://doi.org/10.1117/12.2011433