Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation

EUV, X-ray, electron and ion induced reactions

Akihiro Oshima, Tomoko Gowa Oyama, Masakazu Washio, Seiichi Tagawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    The different exposure sources induce a different energy deposition in resist materials. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. The sensitivities of positive tone non-chemically (non-CA, ZEP) and chemically amplified (CA, UV-3) resist materials are evaluated using various ionized radiation such as EUV, soft X-rays, EB and various ion beams. Since the notations of sensitivity of resist vary with exposure sources, in order to evaluate systematically, the resist sensitivity were estimated in terms of absorbed dose in resist materials. Highly-monochromated EUV and soft X-rays (6.7 nm - 3.1 nm) from the BL27SU of the SPring-8, high energy ion beams (C6+, Ne10+, Mg 12+, Si14+, Ar18+, Kr36+ and Xe 54+) with 6 MeV/u from MEXP of HIMAC, EB from low energy EB accelerator (Hamamatsu Photonics, EB-engine®, 100 kV) and EB lithography system (30 keV and 75keV) were used for the exposure. For non-CA and CA resist materials, it was found that LET effects for sensitivity would be hardly observed except for heavier ion beams. Especially, in the case of the high energy ion beam less than Si14+ with 6 MeV/u, it is suggested that the radiation induced chemical reaction would be equivalent to EUV, soft X-ray and EB exposure. Hence, it indicates that the resist sensitivity could be systematically evaluated by absorbed dose in resist materials.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    Volume8682
    DOIs
    Publication statusPublished - 2013
    EventAdvances in Resist Materials and Processing Technology XXX - San Jose, CA
    Duration: 2013 Feb 252013 Feb 27

    Other

    OtherAdvances in Resist Materials and Processing Technology XXX
    CitySan Jose, CA
    Period13/2/2513/2/27

    Fingerprint

    Chemically Amplified Resist
    Resist
    ion beams
    Ion beams
    Radiation
    Electron
    Ions
    X rays
    linear energy transfer (LET)
    Electrons
    evaluation
    sensitivity
    Evaluation
    radiation
    chemical reactions
    ions
    Soft X-ray
    electrons
    x rays
    Energy transfer

    Keywords

    • Ionizing radiation
    • LET
    • Non-chemically and chemically amplitude resists
    • Positive-tone
    • Radiation chemistry
    • Resist sensitivity

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Oshima, A., Oyama, T. G., Washio, M., & Tagawa, S. (2013). Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, X-ray, electron and ion induced reactions. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8682). [86821A] https://doi.org/10.1117/12.2011433

    Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation : EUV, X-ray, electron and ion induced reactions. / Oshima, Akihiro; Oyama, Tomoko Gowa; Washio, Masakazu; Tagawa, Seiichi.

    Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8682 2013. 86821A.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Oshima, A, Oyama, TG, Washio, M & Tagawa, S 2013, Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation: EUV, X-ray, electron and ion induced reactions. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8682, 86821A, Advances in Resist Materials and Processing Technology XXX, San Jose, CA, 13/2/25. https://doi.org/10.1117/12.2011433
    Oshima, Akihiro ; Oyama, Tomoko Gowa ; Washio, Masakazu ; Tagawa, Seiichi. / Evaluation of sensitivity for positive tone non-chemically and chemically amplified resists using ionized radiation : EUV, X-ray, electron and ion induced reactions. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8682 2013.
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