Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy

T. Yamaguchi, E. Watanabe, T. Souno, H. Nishikawa, M. Hattori, Yoshimichi Ohki, T. Kamiya, K. Arakawa

    Research output: Contribution to journalArticle

    Abstract

    In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.

    Original languageEnglish
    Pages (from-to)371-374
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume191
    Issue number1-4
    DOIs
    Publication statusPublished - 2002 May

    Fingerprint

    silica glass
    Fused silica
    Photoluminescence
    Ions
    photoluminescence
    evaluation
    ions
    stopping power
    energy
    Oxygen
    Defects
    defects
    oxygen
    profiles
    Power electronics
    Ion implantation
    Silicon Dioxide
    Nuclear energy
    ion implantation
    proximity

    Keywords

    • Ion implantation
    • Microspectroscopy
    • Photoluminescence
    • Silica glass

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films
    • Instrumentation
    • Surfaces and Interfaces

    Cite this

    Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy. / Yamaguchi, T.; Watanabe, E.; Souno, T.; Nishikawa, H.; Hattori, M.; Ohki, Yoshimichi; Kamiya, T.; Arakawa, K.

    In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 191, No. 1-4, 05.2002, p. 371-374.

    Research output: Contribution to journalArticle

    @article{c9777fc7047c42a78d57f1cce023601a,
    title = "Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy",
    abstract = "In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.",
    keywords = "Ion implantation, Microspectroscopy, Photoluminescence, Silica glass",
    author = "T. Yamaguchi and E. Watanabe and T. Souno and H. Nishikawa and M. Hattori and Yoshimichi Ohki and T. Kamiya and K. Arakawa",
    year = "2002",
    month = "5",
    doi = "10.1016/S0168-583X(02)00540-2",
    language = "English",
    volume = "191",
    pages = "371--374",
    journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
    issn = "0168-583X",
    publisher = "Elsevier",
    number = "1-4",

    }

    TY - JOUR

    T1 - Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy

    AU - Yamaguchi, T.

    AU - Watanabe, E.

    AU - Souno, T.

    AU - Nishikawa, H.

    AU - Hattori, M.

    AU - Ohki, Yoshimichi

    AU - Kamiya, T.

    AU - Arakawa, K.

    PY - 2002/5

    Y1 - 2002/5

    N2 - In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.

    AB - In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.

    KW - Ion implantation

    KW - Microspectroscopy

    KW - Photoluminescence

    KW - Silica glass

    UR - http://www.scopus.com/inward/record.url?scp=0036574332&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0036574332&partnerID=8YFLogxK

    U2 - 10.1016/S0168-583X(02)00540-2

    DO - 10.1016/S0168-583X(02)00540-2

    M3 - Article

    AN - SCOPUS:0036574332

    VL - 191

    SP - 371

    EP - 374

    JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

    JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

    SN - 0168-583X

    IS - 1-4

    ER -