Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

S. Mitsui, Y. Unno, Y. Ikegami, Y. Takubo, S. Terada, K. Hara, Y. Takahashi, O. Jinnouchi, R. Nagai, T. Kishida, Kohei Yorita, K. Hanagaki, R. Takashima, S. Kamada, K. Yamamura

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×10 16 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×10 16 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.

    Original languageEnglish
    Pages (from-to)36-40
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Volume699
    DOIs
    Publication statusPublished - 2013 Jan 21

    Fingerprint

    Proton irradiation
    punches
    proton irradiation
    Diodes
    Bias voltage
    strip
    evaluation
    diodes
    electric potential
    Pixels
    alternating current
    fluence
    pixels
    Radiation damage
    Sensors
    Electric potential
    Luminance
    sensors
    Protons
    Capacitors

    Keywords

    • HL-LHC
    • Multi-guard ring
    • N-in-p sensor
    • Punch-through-protection
    • Slim-edge

    ASJC Scopus subject areas

    • Instrumentation
    • Nuclear and High Energy Physics

    Cite this

    Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation. / Mitsui, S.; Unno, Y.; Ikegami, Y.; Takubo, Y.; Terada, S.; Hara, K.; Takahashi, Y.; Jinnouchi, O.; Nagai, R.; Kishida, T.; Yorita, Kohei; Hanagaki, K.; Takashima, R.; Kamada, S.; Yamamura, K.

    In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 699, 21.01.2013, p. 36-40.

    Research output: Contribution to journalArticle

    Mitsui, S, Unno, Y, Ikegami, Y, Takubo, Y, Terada, S, Hara, K, Takahashi, Y, Jinnouchi, O, Nagai, R, Kishida, T, Yorita, K, Hanagaki, K, Takashima, R, Kamada, S & Yamamura, K 2013, 'Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 699, pp. 36-40. https://doi.org/10.1016/j.nima.2012.05.071
    Mitsui, S. ; Unno, Y. ; Ikegami, Y. ; Takubo, Y. ; Terada, S. ; Hara, K. ; Takahashi, Y. ; Jinnouchi, O. ; Nagai, R. ; Kishida, T. ; Yorita, Kohei ; Hanagaki, K. ; Takashima, R. ; Kamada, S. ; Yamamura, K. / Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2013 ; Vol. 699. pp. 36-40.
    @article{2b17ddae1d964c51ba171cde4cf5ba31,
    title = "Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation",
    abstract = "Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×10 16 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×10 16 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.",
    keywords = "HL-LHC, Multi-guard ring, N-in-p sensor, Punch-through-protection, Slim-edge",
    author = "S. Mitsui and Y. Unno and Y. Ikegami and Y. Takubo and S. Terada and K. Hara and Y. Takahashi and O. Jinnouchi and R. Nagai and T. Kishida and Kohei Yorita and K. Hanagaki and R. Takashima and S. Kamada and K. Yamamura",
    year = "2013",
    month = "1",
    day = "21",
    doi = "10.1016/j.nima.2012.05.071",
    language = "English",
    volume = "699",
    pages = "36--40",
    journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
    issn = "0168-9002",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

    AU - Mitsui, S.

    AU - Unno, Y.

    AU - Ikegami, Y.

    AU - Takubo, Y.

    AU - Terada, S.

    AU - Hara, K.

    AU - Takahashi, Y.

    AU - Jinnouchi, O.

    AU - Nagai, R.

    AU - Kishida, T.

    AU - Yorita, Kohei

    AU - Hanagaki, K.

    AU - Takashima, R.

    AU - Kamada, S.

    AU - Yamamura, K.

    PY - 2013/1/21

    Y1 - 2013/1/21

    N2 - Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×10 16 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×10 16 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.

    AB - Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×10 16 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×10 16 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.

    KW - HL-LHC

    KW - Multi-guard ring

    KW - N-in-p sensor

    KW - Punch-through-protection

    KW - Slim-edge

    UR - http://www.scopus.com/inward/record.url?scp=84870472140&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84870472140&partnerID=8YFLogxK

    U2 - 10.1016/j.nima.2012.05.071

    DO - 10.1016/j.nima.2012.05.071

    M3 - Article

    AN - SCOPUS:84870472140

    VL - 699

    SP - 36

    EP - 40

    JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    SN - 0168-9002

    ER -