Evaluation of soft-error hardness of DRAMs undei quasi-heavy ion irradiation using he single ion microprobe technique

T. Matsukawa, S. Mori, T. Tanii, T. T. Ariniura, M. Koh, K. Igarashi, T. Sugimoto, I. Ohdomari

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Soft-error immunity of a 256kbit DRAM against quasi-heavy ion irradiation has been evaluated using He single ion microprobe at Waseda University. The technique for hitting micron size area with arbitrary number of He ions enables us to simulate the space environment under irradiation of heavy ions with higher LET than that of a-particles. From the maps of error-sensitive sites obtained by irradiating various number of He ions, the threshold LET of soft-errors, effect of diffused charges on the soft-error cross section, and susceptibility to multi-bit errors have been estimated. The results of measuring single-ion induced noise charges at the PN junction which is considered as equivalent to the storage node of the DRAM have been presented and the origins which determine the soft-error immunity under irradiation with various LET have been discussed.

Original languageEnglish
Pages (from-to)2849-2855
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume43
Issue number6 PART 1
DOIs
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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