Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source

M. Takai, Y. Arita, S. Abo, T. Iwamatsu, S. Maegawa, H. Sayama, Y. Yamaguchi, Masahide Inuishi, T. Nishimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Soft errors in DRAMs and SRAMs have been evaluated using nuclear microprobes and neutron sources. Direct observation of soft errors in a DRAM such as soft error mapping indicates both cell-mode and bit- line-mode soft errors at local positions. Well engineering parameters, such as retrograde wells by high energy ion implantation in DRAMs and SRAMs, are directly evaluated by ion beam induced current (IBIC) using nuclear microprobes. Neutron induced soft errors caused by boron in BPSG (borophosphocilicate) layers have been clarified. Floating body effect in partially depleted SOI(silicon-on-insulator) MOSFETs and the effectiveness of body-tie structures in SOI MOSFETs have been directly observed using nuclear microprobe irradiation.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages17-24
Number of pages8
ISBN (Electronic)2914601018
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany
Duration: 2001 Sep 112001 Sep 13

Other

Other31st European Solid-State Device Research Conference, ESSDERC 2001
CountryGermany
CityNuremberg
Period01/9/1101/9/13

Fingerprint

Dynamic random access storage
Neutron sources
Static random access storage
Silicon
Induced currents
Ion implantation
Ion beams
Boron
Neutrons
Irradiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Takai, M., Arita, Y., Abo, S., Iwamatsu, T., Maegawa, S., Sayama, H., ... Nishimura, T. (2001). Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. In European Solid-State Device Research Conference (pp. 17-24). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2001.195199

Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. / Takai, M.; Arita, Y.; Abo, S.; Iwamatsu, T.; Maegawa, S.; Sayama, H.; Yamaguchi, Y.; Inuishi, Masahide; Nishimura, T.

European Solid-State Device Research Conference. IEEE Computer Society, 2001. p. 17-24.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takai, M, Arita, Y, Abo, S, Iwamatsu, T, Maegawa, S, Sayama, H, Yamaguchi, Y, Inuishi, M & Nishimura, T 2001, Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. in European Solid-State Device Research Conference. IEEE Computer Society, pp. 17-24, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 01/9/11. https://doi.org/10.1109/ESSDERC.2001.195199
Takai M, Arita Y, Abo S, Iwamatsu T, Maegawa S, Sayama H et al. Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. In European Solid-State Device Research Conference. IEEE Computer Society. 2001. p. 17-24 https://doi.org/10.1109/ESSDERC.2001.195199
Takai, M. ; Arita, Y. ; Abo, S. ; Iwamatsu, T. ; Maegawa, S. ; Sayama, H. ; Yamaguchi, Y. ; Inuishi, Masahide ; Nishimura, T. / Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. European Solid-State Device Research Conference. IEEE Computer Society, 2001. pp. 17-24
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