Evaluation of strained silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation

Motohiro Tomita, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Atsushi Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Global and local strained-Si samples, namely strained-Si on insulator (SSOI) wafer and a Si substrate with a patterned SiN film were each evaluated by electron backscattering pattern (EBSP). In the EBSP measurements for SSOI, biaxial tensile stresses (biaxial tensile strains and compressive strain perpendicular to the surface) were obtained, whose values were consistent with those obtained by UV-Raman spectroscopy. One-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by EBSP, UV-Raman spectroscopy with a deconvolution method, and edge force model calculation. The results were well consistent with each other. EBSP allows us to measure stress and strain in the patterned SiN sample with 150-nm wide space. Furthermore, anisotropic biaxial stress including shear stress was also obtained by EBSP.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
Pages123-128
Number of pages6
DOIs
Publication statusPublished - 2011 Mar 23
Externally publishedYes
EventInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo
Duration: 2010 Jun 32010 Jun 5

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826

Other

OtherInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
CityTokyo
Period10/6/310/6/5

Fingerprint

Backscattering
Scattering
Electrons
Ultraviolet spectroscopy
Raman spectroscopy
Tensile strain
Deconvolution
Substrates
Tensile stress
Stress concentration
Shear stress
Strained silicon

Keywords

  • EBSP
  • Semiconductor
  • Silicon
  • Strain
  • Stress

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Tomita, M., Kosemura, D., Takei, M., Nagata, K., Akamatsu, H., & Ogura, A. (2011). Evaluation of strained silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation. In Technology Evolution for Silicon Nano-Electronics (pp. 123-128). (Key Engineering Materials; Vol. 470). https://doi.org/10.4028/www.scientific.net/KEM.470.123

Evaluation of strained silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation. / Tomita, Motohiro; Kosemura, Daisuke; Takei, Munehisa; Nagata, Kohki; Akamatsu, Hiroaki; Ogura, Atsushi.

Technology Evolution for Silicon Nano-Electronics. 2011. p. 123-128 (Key Engineering Materials; Vol. 470).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tomita, M, Kosemura, D, Takei, M, Nagata, K, Akamatsu, H & Ogura, A 2011, Evaluation of strained silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation. in Technology Evolution for Silicon Nano-Electronics. Key Engineering Materials, vol. 470, pp. 123-128, International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE, Tokyo, 10/6/3. https://doi.org/10.4028/www.scientific.net/KEM.470.123
Tomita M, Kosemura D, Takei M, Nagata K, Akamatsu H, Ogura A. Evaluation of strained silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation. In Technology Evolution for Silicon Nano-Electronics. 2011. p. 123-128. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.470.123
Tomita, Motohiro ; Kosemura, Daisuke ; Takei, Munehisa ; Nagata, Kohki ; Akamatsu, Hiroaki ; Ogura, Atsushi. / Evaluation of strained silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation. Technology Evolution for Silicon Nano-Electronics. 2011. pp. 123-128 (Key Engineering Materials).
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