TY - JOUR
T1 - Evaluation of strained-silicon by electron backscattering pattern measurement
T2 - Comparison study with UV-raman measurement and edge force model calculation
AU - Tomita, Motohiro
AU - Kosemura, Daisuke
AU - Takei, Munehisa
AU - Nagata, Kohki
AU - Akamatsu, Hiroaki
AU - Ogura, Atsushi
PY - 2011/1
Y1 - 2011/1
N2 - We demonstrate the results of strain (stress) evaluation obtained from electron backscattering pattern (EBSP) measurement for samples of a strained Si-on-insulator (SSOI) and a Si substrate with a patterned SiN film. Two-dimensional stress distributions were obtained in 40 ×40 μm 2 areas of the SSOI. The biaxial stress state was also obtained in the SSOI. Furthermore, clear cross-hatch contrast was observed, especially in the distribution of shear stress Sxy , in contrast to with the other distributions of normal stress Sxx and Syy . One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were also obtained from EBSP measurement. Moreover, the results were compared with those of UV-Raman measurement and edge force model calculation, and were found to have a good correlation with each other. EBSP measurement was used to measure the complicated biaxial stress including the shear stress in a sample with a 150-nm-wide space pattern. We can conclude that EBSP measurement is a useful method for precisely measuring stress with high spatial resolution.
AB - We demonstrate the results of strain (stress) evaluation obtained from electron backscattering pattern (EBSP) measurement for samples of a strained Si-on-insulator (SSOI) and a Si substrate with a patterned SiN film. Two-dimensional stress distributions were obtained in 40 ×40 μm 2 areas of the SSOI. The biaxial stress state was also obtained in the SSOI. Furthermore, clear cross-hatch contrast was observed, especially in the distribution of shear stress Sxy , in contrast to with the other distributions of normal stress Sxx and Syy . One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were also obtained from EBSP measurement. Moreover, the results were compared with those of UV-Raman measurement and edge force model calculation, and were found to have a good correlation with each other. EBSP measurement was used to measure the complicated biaxial stress including the shear stress in a sample with a 150-nm-wide space pattern. We can conclude that EBSP measurement is a useful method for precisely measuring stress with high spatial resolution.
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U2 - 10.1143/JJAP.50.010111
DO - 10.1143/JJAP.50.010111
M3 - Article
AN - SCOPUS:79951506511
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1
M1 - 010111
ER -