Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films

K. Yoshioka, R. Yokogawa, M. Koharada, H. Takeuchi, G. Ogasawara, I. Hirosawa, T. Watanabe, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We measured the influence of the germanium (Ge) nearest neighbor atom on the lattice vibration of silicon germanium (SiGe) thin films on silicon substrate, which is expected as a material for next-generation electronic and thermoelectric devices, by x-ray absorption fine structure measurement. The amount of changes in the Debye-Waller factor (Δσ2) of each sample were estimated from the obtained extended x-ray absorption fine structure spectra, and it was experimentally clarified that the lattice vibration of the SiGe films were different from that of Ge. On the other hand, it is considered that the lattice vibration of the SiGe films were suppressed by the compressive strain, since Δσ2 have hardly changed with the Ge concentration. The Einstein temperature estimated from Δσ2 decreased with increasing Ge concentration, suggesting that the thermal conductivity of SiGe film can be controlled by Ge concentration.

Original languageEnglish
Title of host publicationPRiME 2020
Subtitle of host publicationSiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
EditorsQ. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
PublisherIOP Publishing Ltd.
Pages473-479
Number of pages7
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2020
Externally publishedYes
EventPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
Duration: 2020 Oct 42020 Oct 9

Publication series

NameECS Transactions
Number5
Volume98
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
CountryUnited States
CityHonolulu
Period20/10/420/10/9

ASJC Scopus subject areas

  • Engineering(all)

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