TY - GEN
T1 - Evaluation of temperature dependence and lifetime of 79GHz power amplifier
AU - Li, Chen Yang
AU - Yoshida, Takeshi
AU - Katayama, Kosuke
AU - Motoyoshi, Mizuki
AU - Takano, Kyoya
AU - Amakawa, Shuhei
AU - Fujishima, Minoru
PY - 2013
Y1 - 2013
N2 - A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.
AB - A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.
KW - CMOS
KW - lifetime of PA
KW - millimeter-wave
KW - power amplifier
KW - temperature dependence
UR - http://www.scopus.com/inward/record.url?scp=84885626396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885626396&partnerID=8YFLogxK
U2 - 10.1109/IMFEDK.2013.6602258
DO - 10.1109/IMFEDK.2013.6602258
M3 - Conference contribution
AN - SCOPUS:84885626396
SN - 9781467361064
T3 - IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai
SP - 100
EP - 101
BT - IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai
T2 - 2013 11th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2013
Y2 - 5 June 2013 through 6 June 2013
ER -