Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments

Y. Unno, S. Mitsui, R. Hori, Y. Ikegami, S. Terada, S. Kamada, K. Yamamura, K. Hanagaki, K. Hara, O. Jinnouchi, N. Kimura, K. Nagai, I. Nakano, S. Oda, R. Takashima, Y. Takubo, J. Tojo, K. Yorita

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Radiation-tolerant n+-in-p silicon sensors were developed for use in very high radiation environments. Novel n+-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n+ implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon-silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.

    Original languageEnglish
    Pages (from-to)183-188
    Number of pages6
    JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
    Volume731
    DOIs
    Publication statusPublished - 2013

    Fingerprint

    strip
    Pixels
    pixels
    Radiation
    punches
    evaluation
    sensors
    Sensors
    Electric potential
    electric potential
    radiation
    fluence
    silicon
    Silicon sensors
    Silicon
    Radiation damage
    Silicon oxides
    computer aided design
    silicon oxides
    radiation damage

    Keywords

    • n-in-p
    • p-type
    • Pixel
    • Radiation damage
    • Silicon sensor
    • Strip

    ASJC Scopus subject areas

    • Instrumentation
    • Nuclear and High Energy Physics

    Cite this

    Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments. / Unno, Y.; Mitsui, S.; Hori, R.; Ikegami, Y.; Terada, S.; Kamada, S.; Yamamura, K.; Hanagaki, K.; Hara, K.; Jinnouchi, O.; Kimura, N.; Nagai, K.; Nakano, I.; Oda, S.; Takashima, R.; Takubo, Y.; Tojo, J.; Yorita, K.

    In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 731, 2013, p. 183-188.

    Research output: Contribution to journalArticle

    Unno, Y, Mitsui, S, Hori, R, Ikegami, Y, Terada, S, Kamada, S, Yamamura, K, Hanagaki, K, Hara, K, Jinnouchi, O, Kimura, N, Nagai, K, Nakano, I, Oda, S, Takashima, R, Takubo, Y, Tojo, J & Yorita, K 2013, 'Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 731, pp. 183-188. https://doi.org/10.1016/j.nima.2013.04.075
    Unno, Y. ; Mitsui, S. ; Hori, R. ; Ikegami, Y. ; Terada, S. ; Kamada, S. ; Yamamura, K. ; Hanagaki, K. ; Hara, K. ; Jinnouchi, O. ; Kimura, N. ; Nagai, K. ; Nakano, I. ; Oda, S. ; Takashima, R. ; Takubo, Y. ; Tojo, J. ; Yorita, K. / Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2013 ; Vol. 731. pp. 183-188.
    @article{0f0eb2bf93a348198cd0014e6092a838,
    title = "Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments",
    abstract = "Radiation-tolerant n+-in-p silicon sensors were developed for use in very high radiation environments. Novel n+-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n+ implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon-silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.",
    keywords = "n-in-p, p-type, Pixel, Radiation damage, Silicon sensor, Strip",
    author = "Y. Unno and S. Mitsui and R. Hori and Y. Ikegami and S. Terada and S. Kamada and K. Yamamura and K. Hanagaki and K. Hara and O. Jinnouchi and N. Kimura and K. Nagai and I. Nakano and S. Oda and R. Takashima and Y. Takubo and J. Tojo and K. Yorita",
    year = "2013",
    doi = "10.1016/j.nima.2013.04.075",
    language = "English",
    volume = "731",
    pages = "183--188",
    journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
    issn = "0168-9002",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments

    AU - Unno, Y.

    AU - Mitsui, S.

    AU - Hori, R.

    AU - Ikegami, Y.

    AU - Terada, S.

    AU - Kamada, S.

    AU - Yamamura, K.

    AU - Hanagaki, K.

    AU - Hara, K.

    AU - Jinnouchi, O.

    AU - Kimura, N.

    AU - Nagai, K.

    AU - Nakano, I.

    AU - Oda, S.

    AU - Takashima, R.

    AU - Takubo, Y.

    AU - Tojo, J.

    AU - Yorita, K.

    PY - 2013

    Y1 - 2013

    N2 - Radiation-tolerant n+-in-p silicon sensors were developed for use in very high radiation environments. Novel n+-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n+ implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon-silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.

    AB - Radiation-tolerant n+-in-p silicon sensors were developed for use in very high radiation environments. Novel n+-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n+ implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon-silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.

    KW - n-in-p

    KW - p-type

    KW - Pixel

    KW - Radiation damage

    KW - Silicon sensor

    KW - Strip

    UR - http://www.scopus.com/inward/record.url?scp=84888387758&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84888387758&partnerID=8YFLogxK

    U2 - 10.1016/j.nima.2013.04.075

    DO - 10.1016/j.nima.2013.04.075

    M3 - Article

    AN - SCOPUS:84888387758

    VL - 731

    SP - 183

    EP - 188

    JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

    SN - 0168-9002

    ER -