Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy

Ryo Yokogawa, Motohiro Tomita, Takanobu Watanabe, Atsushi Ogura

Research output: Contribution to journalArticle

Abstract

Thermal conductivity characteristics of Si nanowires (SiNWs) treated with thermal oxidation before and after a subsequent Ar+ ion irradiation process were evaluated by UV Raman spectroscopy, in order to investigate the impact of interfacial oxide-induced lattice disorder. Laser-power-dependent Raman spectroscopy showed that the rise in temperature caused by laser heating of SiNWs is suppressed by the Ar+ ion irradiation process. It is considered that this suppression of an increase in temperature is caused by the Ar+ ion irradiation breaking bonds at the SiO2/SiNW interface. These results indicate that not only roughness and defects but also bonding characteristics at SiO2/SiNW interfaces should be carefully considered to achieve a low value of thermal conductivity for next-generation SiNW thermoelectric devices. To realize phonon scattering in SiNWs efficiently, optimization of thermal oxidation is necessary.

Original languageEnglish
Article numberSDDF04
JournalJapanese journal of applied physics
Volume58
Issue numberSD
DOIs
Publication statusPublished - 2019

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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