Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼

Akihiro Oshima, Toru Hinata, Hirotaka Nakamura, Toshitaka Oka, Nagayasu Oshima, Brian E. O'Rourke, Ryoichi Suzuki, Masakazu Washio, Seiichi Tagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.

Original languageEnglish
Title of host publicationAdvances in Patterning Materials and Processes XXXI
PublisherSPIE
ISBN (Print)9780819499745
DOIs
Publication statusPublished - 2014 Jan 1
EventAdvances in Patterning Materials and Processes XXXI - San Jose, CA, United States
Duration: 2014 Feb 242014 Feb 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9051
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvances in Patterning Materials and Processes XXXI
CountryUnited States
CitySan Jose, CA
Period14/2/2414/2/27

Keywords

  • Chemically and non-chemically amplified resists
  • EBL
  • EUVL
  • Free-volume
  • LER
  • O-Ps
  • PPMA
  • Resist sensitivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Oshima, A., Hinata, T., Nakamura, H., Oka, T., Oshima, N., O'Rourke, B. E., Suzuki, R., Washio, M., & Tagawa, S. (2014). Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. In Advances in Patterning Materials and Processes XXXI [905107] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9051). SPIE. https://doi.org/10.1117/12.2046659