Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼

Akihiro Oshima, Toru Hinata, Hirotaka Nakamura, Toshitaka Oka, Nagayasu Oshima, Brian E. O'Rourke, Ryoichi Suzuki, Masakazu Washio, Seiichi Tagawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    PublisherSPIE
    Volume9051
    ISBN (Print)9780819499745
    DOIs
    Publication statusPublished - 2014
    EventAdvances in Patterning Materials and Processes XXXI - San Jose, CA
    Duration: 2014 Feb 242014 Feb 27

    Other

    OtherAdvances in Patterning Materials and Processes XXXI
    CitySan Jose, CA
    Period14/2/2414/2/27

    Fingerprint

    Vacancy
    Free volume
    Resist
    Roughness
    Vacancies
    roughness
    Surface roughness
    Extreme ultraviolet lithography
    evaluation
    Line
    Evaluation
    lithography
    positronium
    EUV Lithography
    Lifetime
    Radiation chemistry
    life (durability)
    Positron annihilation
    Positrons
    radiation chemistry

    Keywords

    • Chemically and non-chemically amplified resists
    • EBL
    • EUVL
    • Free-volume
    • LER
    • O-Ps
    • PPMA
    • Resist sensitivity

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Oshima, A., Hinata, T., Nakamura, H., Oka, T., Oshima, N., O'Rourke, B. E., ... Tagawa, S. (2014). Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9051). [905107] SPIE. https://doi.org/10.1117/12.2046659

    Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. / Oshima, Akihiro; Hinata, Toru; Nakamura, Hirotaka; Oka, Toshitaka; Oshima, Nagayasu; O'Rourke, Brian E.; Suzuki, Ryoichi; Washio, Masakazu; Tagawa, Seiichi.

    Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9051 SPIE, 2014. 905107.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Oshima, A, Hinata, T, Nakamura, H, Oka, T, Oshima, N, O'Rourke, BE, Suzuki, R, Washio, M & Tagawa, S 2014, Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9051, 905107, SPIE, Advances in Patterning Materials and Processes XXXI, San Jose, CA, 14/2/24. https://doi.org/10.1117/12.2046659
    Oshima A, Hinata T, Nakamura H, Oka T, Oshima N, O'Rourke BE et al. Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9051. SPIE. 2014. 905107 https://doi.org/10.1117/12.2046659
    Oshima, Akihiro ; Hinata, Toru ; Nakamura, Hirotaka ; Oka, Toshitaka ; Oshima, Nagayasu ; O'Rourke, Brian E. ; Suzuki, Ryoichi ; Washio, Masakazu ; Tagawa, Seiichi. / Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9051 SPIE, 2014.
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    AU - Oka, Toshitaka

    AU - Oshima, Nagayasu

    AU - O'Rourke, Brian E.

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