Abstract
ZnTe thin films were electrochemically deposited onto Au-coated Cu substrates from an electrolytic solution containing ZnSO 4, TeO 2, citric acid and sodium citrate. Effects of deposition potentials and solution's Zn concentrations on the structure, chemical composition and electrical property were investigated. The resistivity, conduction type, carrier density, and carrier mobility were evaluated with a Hall effect measurement apparatus. A film with nearly stoichiometric composition was deposited at - 0.80 V vs. Ag /AgCl at 353 K from a solution containing 2.0 × 10 -2 kmol m -3-ZnSO 4, 1.0 × 10 -4 kmol m -3-TeO 2, 9.0 × 10 -2 kmol m -3-citric acid and 2.1 × 10 -1 kmol m -3-sodium citrate and was well crystallized with cubic preferential orientation along the (111) plane. A resistivity, the carrier density and the carrier mobility were 4.1 × 10 2 Ωm, 2.9 × 10 19 m -3 and 5.3 × 10 -4 m 2 V-1 s -1, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 298-302 |
| Number of pages | 5 |
| Journal | Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals |
| Volume | 69 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2005 Mar |
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Keywords
- Citric acid
- Electrical property
- Electrodeposition
- Hall effect
- Zinc telluride
ASJC Scopus subject areas
- Metals and Alloys
Cite this
Evaluations of electrical properties for ZnTe thin films electrodeposited from a citric acid bath with a hall effect measurement. / Ohtomo, Takeshi; Ishizaki, Takahiro; Ogiwara, Daisuke; Kawarada, Hiroshi; Fuwa, Akio.
In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 69, No. 3, 03.2005, p. 298-302.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Evaluations of electrical properties for ZnTe thin films electrodeposited from a citric acid bath with a hall effect measurement
AU - Ohtomo, Takeshi
AU - Ishizaki, Takahiro
AU - Ogiwara, Daisuke
AU - Kawarada, Hiroshi
AU - Fuwa, Akio
PY - 2005/3
Y1 - 2005/3
N2 - ZnTe thin films were electrochemically deposited onto Au-coated Cu substrates from an electrolytic solution containing ZnSO 4, TeO 2, citric acid and sodium citrate. Effects of deposition potentials and solution's Zn concentrations on the structure, chemical composition and electrical property were investigated. The resistivity, conduction type, carrier density, and carrier mobility were evaluated with a Hall effect measurement apparatus. A film with nearly stoichiometric composition was deposited at - 0.80 V vs. Ag /AgCl at 353 K from a solution containing 2.0 × 10 -2 kmol m -3-ZnSO 4, 1.0 × 10 -4 kmol m -3-TeO 2, 9.0 × 10 -2 kmol m -3-citric acid and 2.1 × 10 -1 kmol m -3-sodium citrate and was well crystallized with cubic preferential orientation along the (111) plane. A resistivity, the carrier density and the carrier mobility were 4.1 × 10 2 Ωm, 2.9 × 10 19 m -3 and 5.3 × 10 -4 m 2 V-1 s -1, respectively.
AB - ZnTe thin films were electrochemically deposited onto Au-coated Cu substrates from an electrolytic solution containing ZnSO 4, TeO 2, citric acid and sodium citrate. Effects of deposition potentials and solution's Zn concentrations on the structure, chemical composition and electrical property were investigated. The resistivity, conduction type, carrier density, and carrier mobility were evaluated with a Hall effect measurement apparatus. A film with nearly stoichiometric composition was deposited at - 0.80 V vs. Ag /AgCl at 353 K from a solution containing 2.0 × 10 -2 kmol m -3-ZnSO 4, 1.0 × 10 -4 kmol m -3-TeO 2, 9.0 × 10 -2 kmol m -3-citric acid and 2.1 × 10 -1 kmol m -3-sodium citrate and was well crystallized with cubic preferential orientation along the (111) plane. A resistivity, the carrier density and the carrier mobility were 4.1 × 10 2 Ωm, 2.9 × 10 19 m -3 and 5.3 × 10 -4 m 2 V-1 s -1, respectively.
KW - Citric acid
KW - Electrical property
KW - Electrodeposition
KW - Hall effect
KW - Zinc telluride
UR - http://www.scopus.com/inward/record.url?scp=19544387187&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=19544387187&partnerID=8YFLogxK
U2 - 10.2320/jinstmet.69.298
DO - 10.2320/jinstmet.69.298
M3 - Article
AN - SCOPUS:19544387187
VL - 69
SP - 298
EP - 302
JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
SN - 0021-4876
IS - 3
ER -