Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Korii, T. Deguchi, Takayuki Sota, S. Nakamura

    Research output: Contribution to journalArticle

    51 Citations (Scopus)

    Abstract

    The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

    Original languageEnglish
    Pages (from-to)1671-1673
    Number of pages3
    JournalApplied Physics Letters
    Volume76
    Issue number13
    Publication statusPublished - 2000 Mar 27

    Fingerprint

    ultraviolet radiation
    light emitting diodes
    quantum wells
    cathodoluminescence
    electroluminescence
    alloying
    quantum efficiency
    broadband

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., ... Nakamura, S. (2000). Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. Applied Physics Letters, 76(13), 1671-1673.

    Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. / Chichibu, S. F.; Wada, K.; Müllhäuser, J.; Brandt, O.; Ploog, K. H.; Mizutani, T.; Setoguchi, A.; Nakai, R.; Sugiyama, M.; Nakanishi, H.; Korii, K.; Deguchi, T.; Sota, Takayuki; Nakamura, S.

    In: Applied Physics Letters, Vol. 76, No. 13, 27.03.2000, p. 1671-1673.

    Research output: Contribution to journalArticle

    Chichibu, SF, Wada, K, Müllhäuser, J, Brandt, O, Ploog, KH, Mizutani, T, Setoguchi, A, Nakai, R, Sugiyama, M, Nakanishi, H, Korii, K, Deguchi, T, Sota, T & Nakamura, S 2000, 'Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes', Applied Physics Letters, vol. 76, no. 13, pp. 1671-1673.
    Chichibu SF, Wada K, Müllhäuser J, Brandt O, Ploog KH, Mizutani T et al. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. Applied Physics Letters. 2000 Mar 27;76(13):1671-1673.
    Chichibu, S. F. ; Wada, K. ; Müllhäuser, J. ; Brandt, O. ; Ploog, K. H. ; Mizutani, T. ; Setoguchi, A. ; Nakai, R. ; Sugiyama, M. ; Nakanishi, H. ; Korii, K. ; Deguchi, T. ; Sota, Takayuki ; Nakamura, S. / Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes. In: Applied Physics Letters. 2000 ; Vol. 76, No. 13. pp. 1671-1673.
    @article{0a10000fa3024498a8d862c98ce7daed,
    title = "Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes",
    abstract = "The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.",
    author = "Chichibu, {S. F.} and K. Wada and J. M{\"u}llh{\"a}user and O. Brandt and Ploog, {K. H.} and T. Mizutani and A. Setoguchi and R. Nakai and M. Sugiyama and H. Nakanishi and K. Korii and T. Deguchi and Takayuki Sota and S. Nakamura",
    year = "2000",
    month = "3",
    day = "27",
    language = "English",
    volume = "76",
    pages = "1671--1673",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "13",

    }

    TY - JOUR

    T1 - Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

    AU - Chichibu, S. F.

    AU - Wada, K.

    AU - Müllhäuser, J.

    AU - Brandt, O.

    AU - Ploog, K. H.

    AU - Mizutani, T.

    AU - Setoguchi, A.

    AU - Nakai, R.

    AU - Sugiyama, M.

    AU - Nakanishi, H.

    AU - Korii, K.

    AU - Deguchi, T.

    AU - Sota, Takayuki

    AU - Nakamura, S.

    PY - 2000/3/27

    Y1 - 2000/3/27

    N2 - The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

    AB - The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail.

    UR - http://www.scopus.com/inward/record.url?scp=0000156226&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0000156226&partnerID=8YFLogxK

    M3 - Article

    VL - 76

    SP - 1671

    EP - 1673

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 13

    ER -