Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard system La1.17-xPb xVS3.17

A. Ino, T. Okane, S. I. Fujimori, A. Fujimori, Takashi Mizokawa, Y. Yasui, T. Nishikawa, M. Sato

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS 3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential μ abruptly jumps by ∼0.07 eV between x = 0.15 and 0.17, indicating that a charge gap is opened at x ≃0.16 in agreement with the Mott insulating state of the d2 configuration. When holes or electrons are doped into the Mott insulator of x≃0.16, the gap is filled and the photoemission spectral weight at μ, ρ(μ), gradually increases in a similar way to the electronic specific-heat coefficient, although the spectral weight remains depressed around μ compared to that expected for a normal metal, showing a pseudogap behavior in the metallic samples. The observed behavior of ρ(μ)→0 for x→0.16 is contrasted with the usual picture that the electron effective mass of the Fermi-liquid system is enhanced towards the metal-insulator boundary. With increasing temperature, the gap or the pseudogap is rapidly filled up, and the spectra at T = 300 K appears to be almost those of a normal metal. Near the metal-insulator boundary, the spectra around μ are consistent with the formation of a Coulomb gap, suggesting the influence of long-range Coulomb interaction under the structural disorder intrinsic to this system.

Original languageEnglish
Article number195116
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number19
DOIs
Publication statusPublished - 2004 May
Externally publishedYes

Fingerprint

Metal insulator boundaries
Electronic structure
Metals
electronic structure
Fermi liquids
Metal insulator transition
Electrons
insulators
Chemical potential
Photoemission
Photoelectron spectroscopy
Coulomb interactions
metals
Specific heat
electrons
Substitution reactions
photoelectric emission
Temperature
specific heat
disorders

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard system La1.17-xPb xVS3.17. / Ino, A.; Okane, T.; Fujimori, S. I.; Fujimori, A.; Mizokawa, Takashi; Yasui, Y.; Nishikawa, T.; Sato, M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 19, 195116, 05.2004.

Research output: Contribution to journalArticle

@article{9fef623dc257476181b527a7abe5f70d,
title = "Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard system La1.17-xPb xVS3.17",
abstract = "The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS 3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential μ abruptly jumps by ∼0.07 eV between x = 0.15 and 0.17, indicating that a charge gap is opened at x ≃0.16 in agreement with the Mott insulating state of the d2 configuration. When holes or electrons are doped into the Mott insulator of x≃0.16, the gap is filled and the photoemission spectral weight at μ, ρ(μ), gradually increases in a similar way to the electronic specific-heat coefficient, although the spectral weight remains depressed around μ compared to that expected for a normal metal, showing a pseudogap behavior in the metallic samples. The observed behavior of ρ(μ)→0 for x→0.16 is contrasted with the usual picture that the electron effective mass of the Fermi-liquid system is enhanced towards the metal-insulator boundary. With increasing temperature, the gap or the pseudogap is rapidly filled up, and the spectra at T = 300 K appears to be almost those of a normal metal. Near the metal-insulator boundary, the spectra around μ are consistent with the formation of a Coulomb gap, suggesting the influence of long-range Coulomb interaction under the structural disorder intrinsic to this system.",
author = "A. Ino and T. Okane and Fujimori, {S. I.} and A. Fujimori and Takashi Mizokawa and Y. Yasui and T. Nishikawa and M. Sato",
year = "2004",
month = "5",
doi = "10.1103/PhysRevB.69.195116",
language = "English",
volume = "69",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Evolution of the electronic structure from electron-doped to hole-doped states in the two-dimensional Mott-Hubbard system La1.17-xPb xVS3.17

AU - Ino, A.

AU - Okane, T.

AU - Fujimori, S. I.

AU - Fujimori, A.

AU - Mizokawa, Takashi

AU - Yasui, Y.

AU - Nishikawa, T.

AU - Sato, M.

PY - 2004/5

Y1 - 2004/5

N2 - The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS 3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential μ abruptly jumps by ∼0.07 eV between x = 0.15 and 0.17, indicating that a charge gap is opened at x ≃0.16 in agreement with the Mott insulating state of the d2 configuration. When holes or electrons are doped into the Mott insulator of x≃0.16, the gap is filled and the photoemission spectral weight at μ, ρ(μ), gradually increases in a similar way to the electronic specific-heat coefficient, although the spectral weight remains depressed around μ compared to that expected for a normal metal, showing a pseudogap behavior in the metallic samples. The observed behavior of ρ(μ)→0 for x→0.16 is contrasted with the usual picture that the electron effective mass of the Fermi-liquid system is enhanced towards the metal-insulator boundary. With increasing temperature, the gap or the pseudogap is rapidly filled up, and the spectra at T = 300 K appears to be almost those of a normal metal. Near the metal-insulator boundary, the spectra around μ are consistent with the formation of a Coulomb gap, suggesting the influence of long-range Coulomb interaction under the structural disorder intrinsic to this system.

AB - The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS 3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential μ abruptly jumps by ∼0.07 eV between x = 0.15 and 0.17, indicating that a charge gap is opened at x ≃0.16 in agreement with the Mott insulating state of the d2 configuration. When holes or electrons are doped into the Mott insulator of x≃0.16, the gap is filled and the photoemission spectral weight at μ, ρ(μ), gradually increases in a similar way to the electronic specific-heat coefficient, although the spectral weight remains depressed around μ compared to that expected for a normal metal, showing a pseudogap behavior in the metallic samples. The observed behavior of ρ(μ)→0 for x→0.16 is contrasted with the usual picture that the electron effective mass of the Fermi-liquid system is enhanced towards the metal-insulator boundary. With increasing temperature, the gap or the pseudogap is rapidly filled up, and the spectra at T = 300 K appears to be almost those of a normal metal. Near the metal-insulator boundary, the spectra around μ are consistent with the formation of a Coulomb gap, suggesting the influence of long-range Coulomb interaction under the structural disorder intrinsic to this system.

UR - http://www.scopus.com/inward/record.url?scp=42749100765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42749100765&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.69.195116

DO - 10.1103/PhysRevB.69.195116

M3 - Article

VL - 69

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 19

M1 - 195116

ER -