Abstract
Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2015 |
| Publisher | Trans Tech Publications Ltd |
| Pages | 73-76 |
| Number of pages | 4 |
| Volume | 858 |
| ISBN (Print) | 9783035710427 |
| DOIs | |
| Publication status | Published - 2016 |
| Event | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy Duration: 2015 Oct 4 → 2015 Oct 9 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 858 |
| ISSN (Print) | 02555476 |
Other
| Other | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 |
|---|---|
| Country | Italy |
| City | Sicily |
| Period | 15/10/4 → 15/10/9 |
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Keywords
- BPD
- Dislocation network
- Stacking fault
- TED
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals. / Tani, Komomo; Fujimoto, Tatsuo; Kamei, Kazuhito; Kusunoki, Kazuhiko; Seki, Kazuaki; Yano, Takayuki.
Silicon Carbide and Related Materials 2015. Vol. 858 Trans Tech Publications Ltd, 2016. p. 73-76 (Materials Science Forum; Vol. 858).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals
AU - Tani, Komomo
AU - Fujimoto, Tatsuo
AU - Kamei, Kazuhito
AU - Kusunoki, Kazuhiko
AU - Seki, Kazuaki
AU - Yano, Takayuki
PY - 2016
Y1 - 2016
N2 - Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.
AB - Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.
KW - BPD
KW - Dislocation network
KW - Stacking fault
KW - TED
UR - http://www.scopus.com/inward/record.url?scp=84971572378&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84971572378&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.858.73
DO - 10.4028/www.scientific.net/MSF.858.73
M3 - Conference contribution
AN - SCOPUS:84971572378
SN - 9783035710427
VL - 858
T3 - Materials Science Forum
SP - 73
EP - 76
BT - Silicon Carbide and Related Materials 2015
PB - Trans Tech Publications Ltd
ER -