Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals

Komomo Tani, Tatsuo Fujimoto, Kazuhito Kamei, Kazuhiko Kusunoki, Kazuaki Seki, Takayuki Yano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
PublisherTrans Tech Publications Ltd
Pages73-76
Number of pages4
Volume858
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: 2015 Oct 42015 Oct 9

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)02555476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period15/10/415/10/9

Fingerprint

Edge dislocations
edge dislocations
Dislocations (crystals)
Single crystals
single crystals
Crystals
transferred electron devices
Stacking faults
Seed
stems
crystal defects
Transmission electron microscopy
crystals
seeds
transmission electron microscopy

Keywords

  • BPD
  • Dislocation network
  • Stacking fault
  • TED

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Tani, K., Fujimoto, T., Kamei, K., Kusunoki, K., Seki, K., & Yano, T. (2016). Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals. In Silicon Carbide and Related Materials 2015 (Vol. 858, pp. 73-76). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.73

Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals. / Tani, Komomo; Fujimoto, Tatsuo; Kamei, Kazuhito; Kusunoki, Kazuhiko; Seki, Kazuaki; Yano, Takayuki.

Silicon Carbide and Related Materials 2015. Vol. 858 Trans Tech Publications Ltd, 2016. p. 73-76 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tani, K, Fujimoto, T, Kamei, K, Kusunoki, K, Seki, K & Yano, T 2016, Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals. in Silicon Carbide and Related Materials 2015. vol. 858, Materials Science Forum, vol. 858, Trans Tech Publications Ltd, pp. 73-76, 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 15/10/4. https://doi.org/10.4028/www.scientific.net/MSF.858.73
Tani K, Fujimoto T, Kamei K, Kusunoki K, Seki K, Yano T. Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals. In Silicon Carbide and Related Materials 2015. Vol. 858. Trans Tech Publications Ltd. 2016. p. 73-76. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.858.73
Tani, Komomo ; Fujimoto, Tatsuo ; Kamei, Kazuhito ; Kusunoki, Kazuhiko ; Seki, Kazuaki ; Yano, Takayuki. / Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals. Silicon Carbide and Related Materials 2015. Vol. 858 Trans Tech Publications Ltd, 2016. pp. 73-76 (Materials Science Forum).
@inproceedings{f454d03796e746e482646496f75d94ec,
title = "Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals",
abstract = "Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.",
keywords = "BPD, Dislocation network, Stacking fault, TED",
author = "Komomo Tani and Tatsuo Fujimoto and Kazuhito Kamei and Kazuhiko Kusunoki and Kazuaki Seki and Takayuki Yano",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.73",
language = "English",
isbn = "9783035710427",
volume = "858",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "73--76",
booktitle = "Silicon Carbide and Related Materials 2015",

}

TY - GEN

T1 - Evolution of threading edge dislocations at earlier stages of PVT growth for 4h-SiC single crystals

AU - Tani, Komomo

AU - Fujimoto, Tatsuo

AU - Kamei, Kazuhito

AU - Kusunoki, Kazuhiko

AU - Seki, Kazuaki

AU - Yano, Takayuki

PY - 2016

Y1 - 2016

N2 - Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

AB - Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

KW - BPD

KW - Dislocation network

KW - Stacking fault

KW - TED

UR - http://www.scopus.com/inward/record.url?scp=84971572378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971572378&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.858.73

DO - 10.4028/www.scientific.net/MSF.858.73

M3 - Conference contribution

SN - 9783035710427

VL - 858

T3 - Materials Science Forum

SP - 73

EP - 76

BT - Silicon Carbide and Related Materials 2015

PB - Trans Tech Publications Ltd

ER -