Excited-state absorption measurement in Ge-doped SiO2 glass

Makoto Fujimaki, Kwang Soo Seol, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Optical absorption change in the microsecond order in oxygen-deficient Ge-doped SiO2 glass was measured as a function of time just after photon irradiation from a KrF excimer laser. The absorption above 3 eV was found to decay with a similar time constant as that of the luminescence at 3.1 eV. From this, it is confirmed that the observed absorption change is due to the excitation of electrons from the lowest excited triplet state to an upper state. By taking account of the energy range of the absorption, there is a high possibility that the upper state is the conduction band.

    Original languageEnglish
    Pages (from-to)2913-2915
    Number of pages3
    JournalJournal of Applied Physics
    Volume81
    Issue number6
    Publication statusPublished - 1997 Mar 15

    Fingerprint

    glass
    excitation
    excimer lasers
    atomic energy levels
    time constant
    conduction bands
    optical absorption
    luminescence
    irradiation
    photons
    decay
    oxygen
    electrons
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Excited-state absorption measurement in Ge-doped SiO2 glass. / Fujimaki, Makoto; Seol, Kwang Soo; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 81, No. 6, 15.03.1997, p. 2913-2915.

    Research output: Contribution to journalArticle

    Fujimaki, M, Seol, KS & Ohki, Y 1997, 'Excited-state absorption measurement in Ge-doped SiO2 glass', Journal of Applied Physics, vol. 81, no. 6, pp. 2913-2915.
    Fujimaki, Makoto ; Seol, Kwang Soo ; Ohki, Yoshimichi. / Excited-state absorption measurement in Ge-doped SiO2 glass. In: Journal of Applied Physics. 1997 ; Vol. 81, No. 6. pp. 2913-2915.
    @article{029f1cf63c804cb6aaf61ba4b811363b,
    title = "Excited-state absorption measurement in Ge-doped SiO2 glass",
    abstract = "Optical absorption change in the microsecond order in oxygen-deficient Ge-doped SiO2 glass was measured as a function of time just after photon irradiation from a KrF excimer laser. The absorption above 3 eV was found to decay with a similar time constant as that of the luminescence at 3.1 eV. From this, it is confirmed that the observed absorption change is due to the excitation of electrons from the lowest excited triplet state to an upper state. By taking account of the energy range of the absorption, there is a high possibility that the upper state is the conduction band.",
    author = "Makoto Fujimaki and Seol, {Kwang Soo} and Yoshimichi Ohki",
    year = "1997",
    month = "3",
    day = "15",
    language = "English",
    volume = "81",
    pages = "2913--2915",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "6",

    }

    TY - JOUR

    T1 - Excited-state absorption measurement in Ge-doped SiO2 glass

    AU - Fujimaki, Makoto

    AU - Seol, Kwang Soo

    AU - Ohki, Yoshimichi

    PY - 1997/3/15

    Y1 - 1997/3/15

    N2 - Optical absorption change in the microsecond order in oxygen-deficient Ge-doped SiO2 glass was measured as a function of time just after photon irradiation from a KrF excimer laser. The absorption above 3 eV was found to decay with a similar time constant as that of the luminescence at 3.1 eV. From this, it is confirmed that the observed absorption change is due to the excitation of electrons from the lowest excited triplet state to an upper state. By taking account of the energy range of the absorption, there is a high possibility that the upper state is the conduction band.

    AB - Optical absorption change in the microsecond order in oxygen-deficient Ge-doped SiO2 glass was measured as a function of time just after photon irradiation from a KrF excimer laser. The absorption above 3 eV was found to decay with a similar time constant as that of the luminescence at 3.1 eV. From this, it is confirmed that the observed absorption change is due to the excitation of electrons from the lowest excited triplet state to an upper state. By taking account of the energy range of the absorption, there is a high possibility that the upper state is the conduction band.

    UR - http://www.scopus.com/inward/record.url?scp=0000676811&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0000676811&partnerID=8YFLogxK

    M3 - Article

    VL - 81

    SP - 2913

    EP - 2915

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 6

    ER -