Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

Takenori Ushimi, Hiromi Nakata, Toshihiro Ishizuka, Kazutoshi Sasayama, Shulong Lu, Jianrong Dong, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.

    Original languageEnglish
    Article number252414
    JournalApplied Physics Letters
    Volume100
    Issue number25
    DOIs
    Publication statusPublished - 2012 Jun 18

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    excitons
    relaxation time
    pumps
    reflectance
    probes
    electrons
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates. / Ushimi, Takenori; Nakata, Hiromi; Ishizuka, Toshihiro; Sasayama, Kazutoshi; Lu, Shulong; Dong, Jianrong; Tackeuchi, Atsushi.

    In: Applied Physics Letters, Vol. 100, No. 25, 252414, 18.06.2012.

    Research output: Contribution to journalArticle

    Ushimi T, Nakata H, Ishizuka T, Sasayama K, Lu S, Dong J et al. Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates. Applied Physics Letters. 2012 Jun 18;100(25). 252414. https://doi.org/10.1063/1.4730386
    Ushimi, Takenori ; Nakata, Hiromi ; Ishizuka, Toshihiro ; Sasayama, Kazutoshi ; Lu, Shulong ; Dong, Jianrong ; Tackeuchi, Atsushi. / Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates. In: Applied Physics Letters. 2012 ; Vol. 100, No. 25.
    @article{4c8e0e78245b4384a56e076899ade980,
    title = "Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates",
    abstract = "We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.",
    author = "Takenori Ushimi and Hiromi Nakata and Toshihiro Ishizuka and Kazutoshi Sasayama and Shulong Lu and Jianrong Dong and Atsushi Tackeuchi",
    year = "2012",
    month = "6",
    day = "18",
    doi = "10.1063/1.4730386",
    language = "English",
    volume = "100",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "25",

    }

    TY - JOUR

    T1 - Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

    AU - Ushimi, Takenori

    AU - Nakata, Hiromi

    AU - Ishizuka, Toshihiro

    AU - Sasayama, Kazutoshi

    AU - Lu, Shulong

    AU - Dong, Jianrong

    AU - Tackeuchi, Atsushi

    PY - 2012/6/18

    Y1 - 2012/6/18

    N2 - We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.

    AB - We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.

    UR - http://www.scopus.com/inward/record.url?scp=84863325154&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84863325154&partnerID=8YFLogxK

    U2 - 10.1063/1.4730386

    DO - 10.1063/1.4730386

    M3 - Article

    AN - SCOPUS:84863325154

    VL - 100

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 25

    M1 - 252414

    ER -