Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, Takayuki Sota, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, S. F. Chichibu

    Research output: Contribution to journalArticle

    Abstract

    Exciton dynamics in nonpolar (11-20) InxGa1-xN/GaN multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth were studied. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25 and 17% for the peaks at 2.92 and 2.60 eV, respectively.

    Original languageEnglish
    Pages (from-to)2082-2086
    Number of pages5
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume3
    DOIs
    Publication statusPublished - 2006

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    templates
    excitons
    quantum wells
    photoluminescence
    radiative lifetime
    energy
    decay
    polarization

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth. / Onuma, T.; Chakraborty, A.; Haskell, B. A.; Keller, S.; Sota, Takayuki; Mishra, U. K.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.; Chichibu, S. F.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, 2006, p. 2082-2086.

    Research output: Contribution to journalArticle

    Onuma, T. ; Chakraborty, A. ; Haskell, B. A. ; Keller, S. ; Sota, Takayuki ; Mishra, U. K. ; DenBaars, S. P. ; Speck, J. S. ; Nakamura, S. ; Chichibu, S. F. / Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2006 ; Vol. 3. pp. 2082-2086.
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    title = "Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth",
    abstract = "Exciton dynamics in nonpolar (11-20) InxGa1-xN/GaN multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth were studied. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25 and 17{\%} for the peaks at 2.92 and 2.60 eV, respectively.",
    author = "T. Onuma and A. Chakraborty and Haskell, {B. A.} and S. Keller and Takayuki Sota and Mishra, {U. K.} and DenBaars, {S. P.} and Speck, {J. S.} and S. Nakamura and Chichibu, {S. F.}",
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    AU - Onuma, T.

    AU - Chakraborty, A.

    AU - Haskell, B. A.

    AU - Keller, S.

    AU - Sota, Takayuki

    AU - Mishra, U. K.

    AU - DenBaars, S. P.

    AU - Speck, J. S.

    AU - Nakamura, S.

    AU - Chichibu, S. F.

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    AB - Exciton dynamics in nonpolar (11-20) InxGa1-xN/GaN multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth were studied. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25 and 17% for the peaks at 2.92 and 2.60 eV, respectively.

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