Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

A. Neogi, H. Morkoç, T. Kuroda, Atsushi Tackeuchi, T. Kawazoe, M. Ohtsu

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

    Original languageEnglish
    Pages (from-to)213-217
    Number of pages5
    JournalNano Letters
    Volume5
    Issue number2
    DOIs
    Publication statusPublished - 2005 Feb

    Fingerprint

    Excitons
    Semiconductor quantum dots
    quantum dots
    excitons
    life (durability)
    Wave functions
    Binding energy
    near fields
    Photoluminescence
    binding energy
    wave functions
    photoluminescence
    LDS 751
    Electrons
    room temperature
    electrons
    Temperature

    ASJC Scopus subject areas

    • Materials Science(all)
    • Electronic, Optical and Magnetic Materials
    • Chemistry (miscellaneous)

    Cite this

    Exciton localization in vertically and laterally coupled GaN/AlN quantum dots. / Neogi, A.; Morkoç, H.; Kuroda, T.; Tackeuchi, Atsushi; Kawazoe, T.; Ohtsu, M.

    In: Nano Letters, Vol. 5, No. 2, 02.2005, p. 213-217.

    Research output: Contribution to journalArticle

    Neogi, A, Morkoç, H, Kuroda, T, Tackeuchi, A, Kawazoe, T & Ohtsu, M 2005, 'Exciton localization in vertically and laterally coupled GaN/AlN quantum dots', Nano Letters, vol. 5, no. 2, pp. 213-217. https://doi.org/10.1021/nl048511x
    Neogi, A. ; Morkoç, H. ; Kuroda, T. ; Tackeuchi, Atsushi ; Kawazoe, T. ; Ohtsu, M. / Exciton localization in vertically and laterally coupled GaN/AlN quantum dots. In: Nano Letters. 2005 ; Vol. 5, No. 2. pp. 213-217.
    @article{1801959a4c92436b916383025aec7f00,
    title = "Exciton localization in vertically and laterally coupled GaN/AlN quantum dots",
    abstract = "Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.",
    author = "A. Neogi and H. Morko{\cc} and T. Kuroda and Atsushi Tackeuchi and T. Kawazoe and M. Ohtsu",
    year = "2005",
    month = "2",
    doi = "10.1021/nl048511x",
    language = "English",
    volume = "5",
    pages = "213--217",
    journal = "Nano Letters",
    issn = "1530-6984",
    publisher = "American Chemical Society",
    number = "2",

    }

    TY - JOUR

    T1 - Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

    AU - Neogi, A.

    AU - Morkoç, H.

    AU - Kuroda, T.

    AU - Tackeuchi, Atsushi

    AU - Kawazoe, T.

    AU - Ohtsu, M.

    PY - 2005/2

    Y1 - 2005/2

    N2 - Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

    AB - Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

    UR - http://www.scopus.com/inward/record.url?scp=14644432394&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=14644432394&partnerID=8YFLogxK

    U2 - 10.1021/nl048511x

    DO - 10.1021/nl048511x

    M3 - Article

    C2 - 15794598

    AN - SCOPUS:14644432394

    VL - 5

    SP - 213

    EP - 217

    JO - Nano Letters

    JF - Nano Letters

    SN - 1530-6984

    IS - 2

    ER -