Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

A. Neogi; H. Morkoç; T. Kuroda; A. Tackeuchi; T. Kawazoe; M. Ohtsu

doi:10.1021/nl048511x

Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

A. Neogi^*, H. Morkoç, T. Kuroda, A. Tackeuchi, T. Kawazoe, M. Ohtsu

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

Original language	English
Pages (from-to)	213-217
Number of pages	5
Journal	Nano Letters
Volume	5
Issue number	2
DOIs	https://doi.org/10.1021/nl048511x
Publication status	Published - 2005 Feb 1

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl048511x

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title = "Exciton localization in vertically and laterally coupled GaN/AlN quantum dots",

abstract = "Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.",

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AU - Neogi, A.

AU - Morkoç, H.

AU - Kuroda, T.

AU - Tackeuchi, A.

AU - Kawazoe, T.

AU - Ohtsu, M.

PY - 2005/2/1

Y1 - 2005/2/1

N2 - Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

AB - Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

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Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

Abstract

ASJC Scopus subject areas

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