Exciton localization in vertically and laterally coupled GaN/AlN quantum dots

A. Neogi, H. Morkoç, T. Kuroda, A. Tackeuchi, T. Kawazoe, M. Ohtsu

Research output: Contribution to journalArticle

17 Citations (Scopus)


Near-field and time-resolved photoluminescence measurements show evidence of exciton localization in vertically and laterally coupled GaN quantum dots (QDs). The binding energies in multiple period QDs (MQDs) are observed to be stronger by more than six times compared to single period QDs (SQDs). Excitons in MQDs have a short (450 ps) lifetime and persist at room temperature, while SQDs exhibit extraordinarily long (>5 ns) lifetime at 10 K due to reduced spatial overlap of electron and hole wave functions in strained QDs.

Original languageEnglish
Pages (from-to)213-217
Number of pages5
JournalNano Letters
Issue number2
Publication statusPublished - 2005 Feb 1


ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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