Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

S. F. Chichibu, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Cantwell, C. W. Litton, Takayuki Sota, M. Kawasaki

    Research output: Contribution to journalArticle

    61 Citations (Scopus)

    Abstract

    Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.

    Original languageEnglish
    JournalSemiconductor Science and Technology
    Volume20
    Issue number4
    DOIs
    Publication statusPublished - 2005 Apr

    Fingerprint

    Point defects
    Excitons
    polaritons
    point defects
    Photoluminescence
    excitons
    photoluminescence
    room temperature
    dynamic response
    Vacancies
    Dynamic response
    life (durability)
    Temperature
    Defects
    Lasers
    defects
    lasers
    LDS 751

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO. / Chichibu, S. F.; Uedono, A.; Tsukazaki, A.; Onuma, T.; Zamfirescu, M.; Ohtomo, A.; Kavokin, A.; Cantwell, G.; Litton, C. W.; Sota, Takayuki; Kawasaki, M.

    In: Semiconductor Science and Technology, Vol. 20, No. 4, 04.2005.

    Research output: Contribution to journalArticle

    Chichibu, SF, Uedono, A, Tsukazaki, A, Onuma, T, Zamfirescu, M, Ohtomo, A, Kavokin, A, Cantwell, G, Litton, CW, Sota, T & Kawasaki, M 2005, 'Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO', Semiconductor Science and Technology, vol. 20, no. 4. https://doi.org/10.1088/0268-1242/20/4/009
    Chichibu, S. F. ; Uedono, A. ; Tsukazaki, A. ; Onuma, T. ; Zamfirescu, M. ; Ohtomo, A. ; Kavokin, A. ; Cantwell, G. ; Litton, C. W. ; Sota, Takayuki ; Kawasaki, M. / Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO. In: Semiconductor Science and Technology. 2005 ; Vol. 20, No. 4.
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    abstract = "Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.",
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    AU - Chichibu, S. F.

    AU - Uedono, A.

    AU - Tsukazaki, A.

    AU - Onuma, T.

    AU - Zamfirescu, M.

    AU - Ohtomo, A.

    AU - Kavokin, A.

    AU - Cantwell, G.

    AU - Litton, C. W.

    AU - Sota, Takayuki

    AU - Kawasaki, M.

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    AB - Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.

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