Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

S. F. Chichibu, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Cantwell, C. W. Litton, T. Sota, M. Kawasaki

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Abstract

Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.

Original languageEnglish
Pages (from-to)S67-S77
JournalSemiconductor Science and Technology
Volume20
Issue number4
DOIs
Publication statusPublished - 2005 Apr 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chichibu, S. F., Uedono, A., Tsukazaki, A., Onuma, T., Zamfirescu, M., Ohtomo, A., Kavokin, A., Cantwell, G., Litton, C. W., Sota, T., & Kawasaki, M. (2005). Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO. Semiconductor Science and Technology, 20(4), S67-S77. https://doi.org/10.1088/0268-1242/20/4/009