Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

T. Onuma, S. F. Chichibu, Takayuki Sota, K. Asai, S. Sumiya, T. Shibata, M. Tanaka

    Research output: Contribution to journalArticle

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    Abstract

    Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral line shape was fitted considering A (Γ7v u→Γ7c) and BC (Γ9v7v l→Γ 7c) exciton transitions. The fitting gave the values of them at 0 K to be 6.211 and 6.266 eV, giving the crystal- field splitting (Δcr) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature E was estimated to be 580 K.

    Original languageEnglish
    Pages (from-to)652-654
    Number of pages3
    JournalApplied Physics Letters
    Volume81
    Issue number4
    DOIs
    Publication statusPublished - 2002 Jul 22

    Fingerprint

    vapor phase epitaxy
    sapphire
    low pressure
    excitons
    reflectance
    cathodoluminescence
    crystal field theory
    line spectra
    line shape
    energy
    anomalies
    radii
    temperature
    photons

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy. / Onuma, T.; Chichibu, S. F.; Sota, Takayuki; Asai, K.; Sumiya, S.; Shibata, T.; Tanaka, M.

    In: Applied Physics Letters, Vol. 81, No. 4, 22.07.2002, p. 652-654.

    Research output: Contribution to journalArticle

    Onuma, T. ; Chichibu, S. F. ; Sota, Takayuki ; Asai, K. ; Sumiya, S. ; Shibata, T. ; Tanaka, M. / Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy. In: Applied Physics Letters. 2002 ; Vol. 81, No. 4. pp. 652-654.
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    abstract = "Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral line shape was fitted considering A (Γ7v u→Γ7c) and BC (Γ9v,Γ7v l→Γ 7c) exciton transitions. The fitting gave the values of them at 0 K to be 6.211 and 6.266 eV, giving the crystal- field splitting (Δcr) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature E was estimated to be 580 K.",
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    AU - Onuma, T.

    AU - Chichibu, S. F.

    AU - Sota, Takayuki

    AU - Asai, K.

    AU - Sumiya, S.

    AU - Shibata, T.

    AU - Tanaka, M.

    PY - 2002/7/22

    Y1 - 2002/7/22

    N2 - Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral line shape was fitted considering A (Γ7v u→Γ7c) and BC (Γ9v,Γ7v l→Γ 7c) exciton transitions. The fitting gave the values of them at 0 K to be 6.211 and 6.266 eV, giving the crystal- field splitting (Δcr) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature E was estimated to be 580 K.

    AB - Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral line shape was fitted considering A (Γ7v u→Γ7c) and BC (Γ9v,Γ7v l→Γ 7c) exciton transitions. The fitting gave the values of them at 0 K to be 6.211 and 6.266 eV, giving the crystal- field splitting (Δcr) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature E was estimated to be 580 K.

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