Exciton spectra of cubic and hexagonal GaN epitaxial films

Shigefusa Chichibu, Hajime Okumura, Shuji Nakamura, Guy Feuillet, Takashi Azuhata, Takayuki Sota, Sadafumi Yoshida

    Research output: Contribution to journalArticle

    75 Citations (Scopus)

    Abstract

    Fundamental exciton structures in both cubic (c) and hexagonal (h) polytypes of GaN epitaxial films were compared. The photoreflectance (PR) spectra of both polytypes exhibited excitonic transitions up to room temperature (RT). The lowest exciton resonance energy of c-GaN (3.267 eV at 10 K) was confirmed to be smaller by 0.21 eV than that of h-GaN. The low-temperature photoluminescence (PL) spectra of both polytypes were dominated by excitonic emissions; h-GaN exhibited well-resolved bound and free exciton peaks and c-GaN exhibited a broadened excitonic emission, which was dominated by bound and free excitons below and above 80 K, respectively. The PL spectra at RT of h-GaN exhibited predominant, A and B free exciton emissions. The E2 phonon replicas of excitons were found in the PL spectra of h-GaN, indicating the coupling of excitons with nonpolar phonons through the deformation potential.

    Original languageEnglish
    Pages (from-to)1976-1983
    Number of pages8
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume36
    Issue number3 SUPPL. B
    Publication statusPublished - 1997 Mar

    Fingerprint

    Epitaxial films
    Excitons
    excitons
    Photoluminescence
    photoluminescence
    room temperature
    Phonons
    replicas
    Temperature
    phonons

    Keywords

    • Cubic GaN
    • Excitons
    • Hexagonal GaN
    • Photoluminescence
    • Photoreflectance
    • Room-temperature excitons

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S., Okumura, H., Nakamura, S., Feuillet, G., Azuhata, T., Sota, T., & Yoshida, S. (1997). Exciton spectra of cubic and hexagonal GaN epitaxial films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36(3 SUPPL. B), 1976-1983.

    Exciton spectra of cubic and hexagonal GaN epitaxial films. / Chichibu, Shigefusa; Okumura, Hajime; Nakamura, Shuji; Feuillet, Guy; Azuhata, Takashi; Sota, Takayuki; Yoshida, Sadafumi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 3 SUPPL. B, 03.1997, p. 1976-1983.

    Research output: Contribution to journalArticle

    Chichibu, S, Okumura, H, Nakamura, S, Feuillet, G, Azuhata, T, Sota, T & Yoshida, S 1997, 'Exciton spectra of cubic and hexagonal GaN epitaxial films', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 36, no. 3 SUPPL. B, pp. 1976-1983.
    Chichibu, Shigefusa ; Okumura, Hajime ; Nakamura, Shuji ; Feuillet, Guy ; Azuhata, Takashi ; Sota, Takayuki ; Yoshida, Sadafumi. / Exciton spectra of cubic and hexagonal GaN epitaxial films. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1997 ; Vol. 36, No. 3 SUPPL. B. pp. 1976-1983.
    @article{ad7088768a72428dad5504e17f5dc0a3,
    title = "Exciton spectra of cubic and hexagonal GaN epitaxial films",
    abstract = "Fundamental exciton structures in both cubic (c) and hexagonal (h) polytypes of GaN epitaxial films were compared. The photoreflectance (PR) spectra of both polytypes exhibited excitonic transitions up to room temperature (RT). The lowest exciton resonance energy of c-GaN (3.267 eV at 10 K) was confirmed to be smaller by 0.21 eV than that of h-GaN. The low-temperature photoluminescence (PL) spectra of both polytypes were dominated by excitonic emissions; h-GaN exhibited well-resolved bound and free exciton peaks and c-GaN exhibited a broadened excitonic emission, which was dominated by bound and free excitons below and above 80 K, respectively. The PL spectra at RT of h-GaN exhibited predominant, A and B free exciton emissions. The E2 phonon replicas of excitons were found in the PL spectra of h-GaN, indicating the coupling of excitons with nonpolar phonons through the deformation potential.",
    keywords = "Cubic GaN, Excitons, Hexagonal GaN, Photoluminescence, Photoreflectance, Room-temperature excitons",
    author = "Shigefusa Chichibu and Hajime Okumura and Shuji Nakamura and Guy Feuillet and Takashi Azuhata and Takayuki Sota and Sadafumi Yoshida",
    year = "1997",
    month = "3",
    language = "English",
    volume = "36",
    pages = "1976--1983",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "3 SUPPL. B",

    }

    TY - JOUR

    T1 - Exciton spectra of cubic and hexagonal GaN epitaxial films

    AU - Chichibu, Shigefusa

    AU - Okumura, Hajime

    AU - Nakamura, Shuji

    AU - Feuillet, Guy

    AU - Azuhata, Takashi

    AU - Sota, Takayuki

    AU - Yoshida, Sadafumi

    PY - 1997/3

    Y1 - 1997/3

    N2 - Fundamental exciton structures in both cubic (c) and hexagonal (h) polytypes of GaN epitaxial films were compared. The photoreflectance (PR) spectra of both polytypes exhibited excitonic transitions up to room temperature (RT). The lowest exciton resonance energy of c-GaN (3.267 eV at 10 K) was confirmed to be smaller by 0.21 eV than that of h-GaN. The low-temperature photoluminescence (PL) spectra of both polytypes were dominated by excitonic emissions; h-GaN exhibited well-resolved bound and free exciton peaks and c-GaN exhibited a broadened excitonic emission, which was dominated by bound and free excitons below and above 80 K, respectively. The PL spectra at RT of h-GaN exhibited predominant, A and B free exciton emissions. The E2 phonon replicas of excitons were found in the PL spectra of h-GaN, indicating the coupling of excitons with nonpolar phonons through the deformation potential.

    AB - Fundamental exciton structures in both cubic (c) and hexagonal (h) polytypes of GaN epitaxial films were compared. The photoreflectance (PR) spectra of both polytypes exhibited excitonic transitions up to room temperature (RT). The lowest exciton resonance energy of c-GaN (3.267 eV at 10 K) was confirmed to be smaller by 0.21 eV than that of h-GaN. The low-temperature photoluminescence (PL) spectra of both polytypes were dominated by excitonic emissions; h-GaN exhibited well-resolved bound and free exciton peaks and c-GaN exhibited a broadened excitonic emission, which was dominated by bound and free excitons below and above 80 K, respectively. The PL spectra at RT of h-GaN exhibited predominant, A and B free exciton emissions. The E2 phonon replicas of excitons were found in the PL spectra of h-GaN, indicating the coupling of excitons with nonpolar phonons through the deformation potential.

    KW - Cubic GaN

    KW - Excitons

    KW - Hexagonal GaN

    KW - Photoluminescence

    KW - Photoreflectance

    KW - Room-temperature excitons

    UR - http://www.scopus.com/inward/record.url?scp=0000674353&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0000674353&partnerID=8YFLogxK

    M3 - Article

    VL - 36

    SP - 1976

    EP - 1983

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 3 SUPPL. B

    ER -