Exciton spin dynamics in GaAs quantum wells

S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, Atsushi Tackeuchi

Research output: Contribution to journalArticle

36 Citations (Scopus)


We have investigated the temperature dependence of the exciton spin relaxation between 10 and 300 K in undoped GaAs quantum wells by using the nonlinear transmission pump-probe and the four-wave-mixing techniques. The electron spin relaxation rate above 40 K is found to be proportional to the product of the temperature and the momentum relaxation time, which indicates that the D'yakonov-Perel' interaction governs the spin-flip dynamics. The temperature independence below 30 K is considered to be due to the band-mixing effect that determines the hole spin relaxation, and the spin exchange is effective to the exciton spin relaxation in these temperatures.

Original languageEnglish
Pages (from-to)307-308
Number of pages2
JournalJournal of Luminescence
Publication statusPublished - 1997 Jun
Externally publishedYes



  • Exciton spin relaxation
  • Gaas
  • Momentum relaxation
  • Quantum wells

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Adachi, S., Miyashita, T., Takeyama, S., Takagi, Y., & Tackeuchi, A. (1997). Exciton spin dynamics in GaAs quantum wells. Journal of Luminescence, 72-74, 307-308.