The exciton spin relaxation mechanism in the range 13 and 300 K in InGaAs/InP quantum wells was analyzed using time-resolved spin-dependent pump and probe absorption measurements. It was observed that exciton spin relaxation time, τs above 40 K depend on temperature, T, according to τs∝I-1.1. The carrier density dependence of exciton spin relaxation time was also observed below 40 K. The results show that spin relaxation is governed by D'yakonov-Perel' (DP) process above 40 K and by Bir-Aronov-Pikus (BAP)process below 40 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)